Datasheet > STGB30V60DF

STGB30V60DF

更新时间： 2024-11-20 14:57:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
22页	1911K
描述
600 V、30 A超高速沟槽栅场截止V系列IGBT

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数据手册

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STGB30V60DF 数据手册

STGB30V60DF, STGP30V60DF,

STGW30V60DF, STGWT30V60DF

Trench gate field-stop IGBT, V series

600 V, 30 A very high speed

Datasheet

production data

TAB

Features

TAB

• Maximum junction temperature: T_J= 175 °C

• Tail-less switching off

• V_CE(sat)= 1.85 V (typ.) @ I_C= 30 A

• Tight parameters distribution

• Safe paralleling

D²PAK

TO-220

TAB

• Low thermal resistance

• Very fast soft recovery antiparallel diode

TO-3P

Applications

TO-247

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

Figure 1. Internal schematic diagram

C (2, TAB)

• Power factor correction

• Very high frequency converters

G (1)

Description

This device is an IGBT developed using an

advanced proprietary trench gate field stop

structure. The device is part of the V series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, a positive V_CE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

E (3)

Table 1. Device summary

Order codes

Marking

Package

Packaging

STGB30V60DF

STGP30V60DF

STGW30V60DF

STGWT30V60DF

GB30V60DF

GP30V60DF

GW30V60DF

GWT30V60DF

D²PAK

TO-220

TO-247

TO-3P

Tape and reel

Tube

October 2013

DocID024361 Rev 4

1/22

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...22

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