Datasheet > STGB20M65DF2

STGB20M65DF2

更新时间： 2023-12-20 18:46:08

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
18页	677K
描述
沟槽栅场截止IGBT，M系列，650 V、20 A，低损耗

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STGB20M65DF2 数据手册

STGB20M65DF2

Datasheet

Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT

Features

•

High short-circuit withstand time

V_CE(sat)= 1.55 V (typ.) @ I_C= 20 A

Tight parameters distribution

Safer paralleling

TAB

Low thermal resistance

D²

PAK

Soft and very fast recovery antiparallel diode

C(2, TAB)

Applications

•

Motor control

UPS

G(1)

PFC

General-purpose inverters

Description

E(3)

NG1E3C2T

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss and

the short-circuit functionality is essential. Furthermore, the positive V_CE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.

Product status link

STGB20M65DF2

Product summary

Order code

Marking

STGB20M65DF2

G20M65DF2

D²PAK

Package

Packing

Tape and reel

DS11370 - Rev 3 - October 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...18

中文翻译

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