是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | D2PAK | 包装说明: | D2PAK-3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.8 | Is Samacsys: | N |
最大集电极电流 (IC): | 6 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极发射器阈值电压最大值: | 5 V |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 68 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 535 ns |
标称接通时间 (ton): | 16.5 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGB3NB60HD | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V TO-263 PowerMESH IGBT | |
STGB3NB60HD_03 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT | |
STGB3NB60HDT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT | |
STGB3NB60K | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK Power | |
STGB3NB60KD | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK Power | |
STGB3NB60KDT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK Power | |
STGB3NB60MD | ETC |
获取价格 |
N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT | |
STGB3NB60MDT4 | ETC |
获取价格 |
N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT | |
STGB3NB60SD | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT | |
STGB3NB60SDT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT |