是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | D2PAK | 包装说明: | TO-263, D2PAK-3 |
针数: | 4 | Reach Compliance Code: | not_compliant |
风险等级: | 5.82 | Is Samacsys: | N |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极发射器阈值电压最大值: | 5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 70 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 168 ns | 标称接通时间 (ton): | 16 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGB3NB60K | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK Power | |
STGB3NB60KD | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK Power | |
STGB3NB60KDT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK Power | |
STGB3NB60MD | ETC |
获取价格 |
N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT | |
STGB3NB60MDT4 | ETC |
获取价格 |
N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT | |
STGB3NB60SD | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT | |
STGB3NB60SDT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT | |
STGB3NC120HD | STMICROELECTRONICS |
获取价格 |
Very soft ultrafast recovery anti-parallel diode | |
STGB3NC120HDT4 | STMICROELECTRONICS |
获取价格 |
Very soft ultrafast recovery anti-parallel diode | |
STGB40H65FB | STMICROELECTRONICS |
获取价格 |
650 V、40 A高速沟槽栅场截止HB系列IGBT |