Datasheet > STGB7H60DF

STGB7H60DF

更新时间： 2024-11-24 14:57:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
25页	979K
描述
600 V、7 A高速沟槽栅场截止H系列IGBT

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中文翻译

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数据手册

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STGB7H60DF 数据手册

STGB7H60DF,

STGF7H60DF, STGP7H60DF

Trench gate field-stop IGBT, H series

600 V, 7 A high speed

Datasheet

production data

Features

TAB

• High speed switching

• Tight parameters distribution

• Safe paralleling

D²PAK

• Low thermal resistance

• Short-circuit rated

TAB

• Ultrafast soft recovery antiparallel diode

Applications

• Motor control

• UPS, PFC

TO-220

TO-220FP

Figure 1. Internal schematic diagram

Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. This IGBT series offers the optimum

compromise between conduction and switching

losses, maximizing the efficiency of very high

frequency converters. Furthermore, a positive

C (2, TAB)

G (1)

V_CE(sat)temperature coefficient and very tight

parameter distribution result in easier paralleling

operation.

E (3)

Table 1. Device summary

Order codes

Marking

Packages

Packaging

STGB7H60DF

STGF7H60DF

STGP7H60DF

GB7H60DF

GF7H60DF

GP7H60DF

D²PAK

TO-220FP

TO-220

Tape and reel

Tube

June 2015

DocID027555 Rev 2

1/25

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...25

中文翻译

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