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STGB20NB37LZ PDF预览

STGB20NB37LZ

更新时间: 2024-11-18 22:19:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率控制双极性晶体管
页数 文件大小 规格书
6页 53K
描述
N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT

STGB20NB37LZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.24Is Samacsys:N
其他特性:ESD PROTECTED外壳连接:COLLECTOR
最大集电极电流 (IC):40 A配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
门极发射器阈值电压最大值:2 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):15000 ns
标称接通时间 (ton):2900 nsBase Number Matches:1

STGB20NB37LZ 数据手册

 浏览型号STGB20NB37LZ的Datasheet PDF文件第2页浏览型号STGB20NB37LZ的Datasheet PDF文件第3页浏览型号STGB20NB37LZ的Datasheet PDF文件第4页浏览型号STGB20NB37LZ的Datasheet PDF文件第5页浏览型号STGB20NB37LZ的Datasheet PDF文件第6页 
STGB20NB37LZ  
2
N-CHANNEL CLAMPED 20A D PAK  
INTERNALLY CLAMPED PowerMESH IGBT  
PRELIMINARY DATA  
TYPE  
VCES  
VCE(sat)  
IC  
STGB20NB37LZ CLAMPED < 2.0 V  
20 A  
POLYSILICONGATE VOLTAGE DRIVEN  
LOW THRESHOLD VOLTAGE  
LOW ON-VOLTAGEDROP  
HIGH CURRENT CAPABILITY  
HIGH VOLTAGE CLAMPING FEATURE  
SURFACE-MOUNTING D2PAK (TO-263)  
POWER PACKAGE IN TUBE (NO SUFFIX)  
OR IN TAPE & REEL (SUFFIX ”T4”)  
3
1
D2PAK  
TO-263  
DESCRIPTION  
Using the latest high voltage technology based  
on patented strip layout, STMicroelectronics has  
designed an advanced family of IGBTs with  
outstandingperformances.  
The built in collector-gate zener exhibits a very  
precise active clamping while the gate-emitter  
zener supplies an ESD protection.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
AUTOMOTIVE IGNITION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VECR  
VGE  
Parameter  
Value  
Unit  
Collector-Emitter Voltage (VGS = 0)  
Reverse Battery Protection  
Gate-Emitter Voltage  
CLAMPED  
V
V
20  
CLAMPED  
V
o
IC  
Collector Current (continuous) at Tc = 25 C  
40  
A
o
IC  
Collector Current (continuous) at Tc = 100 C  
30  
A
ICM()  
EAS  
Collector Current (pulsed)  
80  
A
o
Single Pulse Energy Tc = 25 C  
700  
mJ  
W
o
Ptot  
Total Dissipation at Tc = 25 C  
150  
Derating Factor  
1
4
W/oC  
KV  
oC  
oC  
ESD  
Tstg  
Tj  
ESD (Human Body Model)  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/6  
February 2000  

STGB20NB37LZ 替代型号

型号 品牌 替代类型 描述 数据表
STGB20NB37LZT4 STMICROELECTRONICS

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N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH TM IGBT

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