Datasheet > STGB25N36LZAG

STGB25N36LZAG

更新时间： 2023-12-20 18:44:26

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
23页	992K
描述
Automotive-grade 360 V internally clamped IGBT ESCIS 300 mJ

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数据手册

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STGB25N36LZAG 数据手册

STGB25N36LZAG, STGD25N36LZAG,

STGI25N36LZAG

Datasheet

Automotive-grade 360 V internally clamped IGBT E_SCIS300 mJ

Features

TAB

D²PAK

•

AEC-Q101 qualified

DPAK

SCIS energy of 300 mJ @ T_J= 25 °C

Parts are 100% tested in SCIS

ESD gate-emitter protection

Gate-collector high voltage clamping

Logic level gate drive

TAB

I ²PAK

Very low saturation voltage

High pulsed current capability

Gate and gate-emitter resistor

C (2 or TAB)

Applications

•

Automotive ignition coil driver circuit

G (1)

Description

E (3)

This application-specific IGBT utilizes the most advanced PowerMESH technology

optimized for coil driving in the harsh environment of automotive ignition systems.

These devices show very low on-state voltage and very high SCIS energy capability

over a wide operating temperature range. Moreover, ESD-protected logic level gate

input and an integrated gate resistor means no external protection circuitry is

required.

IGBTG1C2TABE3ESD

Product status link

STGB25N36LZAG

STGD25N36LZAG

STGI25N36LZAG

DS13443 - Rev 3 - October 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...23

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