Datasheet > STGB35N35LZ

STGB35N35LZ

更新时间： 2024-11-19 21:16:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
12页	176K
描述
TRANSISTOR,IGBT,N-CHAN,320V V(BR)CES,40A I(C),TO-263AB

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中文翻译

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技术参数
数据手册

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STGB35N35LZ 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
Reach Compliance Code：	not_compliant	风险等级：	5.65
最大集电极电流 (IC)：	40 A	集电极-发射极最大电压：	320 V
门极发射器阈值电压最大值：	2.3 V	门极-发射极最大电压：	12 V
JESD-609代码：	e3	湿度敏感等级：	1
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	176 W	子类别：	Insulated Gate BIP Transistors
表面贴装：	YES	端子面层：	Matte Tin (Sn) - annealed
Base Number Matches：	1

STGB35N35LZ 数据手册

STGB35N35LZ-1

STGB35N35LZ

N-channel clamped - 350mJ - D²PAK / I²PAK

Internally clamped PowerMESH™ IGBT

PRELIMINARY DATA

General features

Type

CES

CE(sat)Max

< 2V

STGB35N35LZ

Clamped

15A

STGB35N35LZ-1

< 2V

■ Polysilicon gate voltage driven

■ Low threshold voltage

D²PAK

I²PAK

■ Low on-voltage drop

■ High current capability

■ High voltage clamping feature

■ Integrated 1.6KΩ resistance in series to the

gate

Internal schematic diagram

Description

This application-specific IGBT utilizes the most

advanced layout techniques based on the

proprietary PowerMESH™ technology. The built-

in Zener Diodes between gate-collector and gate-

emitter provide overvoltage protection

capabilities. The device also exhibits low on-stae

voltage drop and low threshold drive for use in

Automotive ignition system.

Applications

■ Automotive ignition

Order codes

Part number

Marking

Package

Packaging

STGB35N35LZ

GB35N35LZ

D²PAK

I²PAK

Tape & reel

Tube

STGB35N35LZ-1

GB35N35LZ-1

March 2006

Rev 1

1/12

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...12

中文翻译

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