Datasheet > STGB25N40LZAG

STGB25N40LZAG

更新时间： 2024-11-20 14:57:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
20页	962K
描述
汽车级400 V内部钳制IGBT ESCIS 320 mJ

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中文翻译

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数据手册

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STGB25N40LZAG 数据手册

STGB25N40LZAG, STGD25N40LZAG

Datasheet

Automotive-grade 400 V internally clamped IGBT E_SCIS320 mJ

Features

TAB

•

AEC-Q101 qualified

SCIS energy of 320 mJ @ T_J= 25 °C

Parts are 100% tested in SCIS

ESD gate-emitter protection

Gate-collector high voltage clamping

Logic level gate drive

D²PAK

DPAK

C (2 or TAB)

Very low saturation voltage

High pulsed current capability

Gate and gate-emitter resistor

G (1)

Applications

E (3)

IGBTG1C2TABE3ESD

•

Automotive ignition coil driver circuit

Description

This application-specific IGBT utilizes the most advanced PowerMESH technology

optimized for coil driving in the harsh environment of automotive ignition systems.

These devices show very low on-state voltage and very high SCIS energy capability

over a wide operating temperature range. Moreover, ESD-protected logic level gate

input and an integrated gate resistor means no external protection circuitry is

required.

Product status

STGB25N40LZAG

STGD25N40LZAG

Product summary

Order code

Marking

STGB25N40LZAG

GB25N40LZ

D²PAK

Package

Packing

Tape and reel

STGD25N40LZAG

GD25N40LZ

DPAK

Order code

Marking

Package

Packing

Tape and reel

DS12284 - Rev 5 - October 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...20

中文翻译

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