Datasheet > STGB30NC60K

STGB30NC60K

更新时间： 2024-11-19 04:01:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
15页	386K
描述
30 A - 600 V - short circuit rugged IGBT

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中文翻译

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数据手册

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STGB30NC60K 数据手册

STGB30NC60K

STGP30NC60K

30 A - 600 V - short circuit rugged IGBT

Features

■ Low on-voltage drop (V

)

CE(sat)

■ Low C / C ratio (no cross conduction

res

ies

susceptibility)

■ Short circuit withstand time 10 µs

Applications

D²PAK

TO-220

■ High frequency inverters

■ Motor drivers

Description

This IGBT utilizes the advanced PowerMESH™

process resulting in an excellent trade-off

between switching performance and low on-state

behavior.

Figure 1.

Internal schematic diagram

Table 1.

Device summary

Order codes

Marking

Package

D²PAK

TO-220

Packaging

STGB30NC60KT4

STGP30NC60K

GB30NC60K

GP30NC60K

Tape and reel

Tube

March 2008

Rev 2

1/15

www.st.com

12 3 4 5 6 7...15

中文翻译

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STGB3NB60FDT4	STMICROELECTRONICS	获取价格	N-CHANNEL 3A - 600V TO-220/TO-220FP/DPAK/D2PAK POWERMESH IGBT
STGB3NB60HD	STMICROELECTRONICS	获取价格	N-CHANNEL 3A - 600V TO-263 PowerMESH IGBT