Datasheet > STGB30H60DLLFBAG

STGB30H60DLLFBAG

更新时间： 2024-11-24 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
17页	1005K
描述
汽车级600 V、30 A高速沟槽栅场截止HB系列IGBT

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STGB30H60DLLFBAG 数据手册

STGB30H60DLLFBAG

Automotive-grade trench gate field-stop IGBT, HB series

600 V, 30 A high speed

Datasheet - production data

Features



AEC-Q101 qualified

Maximum junction temperature: T_J= 175 °C

Logic level gate drive

High speed switching series

Minimized tail current

V_CE(sat)= 1.7 V (typ.) @ I_C= 30 A

Low V_Fsoft recovery co-packaged diode

Tight parameters distribution

Safer paralleling

TAB

D²

PAK

Low thermal resistance

Applications

Figure 1: Internal schematic diagram



Ignition

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the new HB series

of IGBTs, which represents an optimum

compromise between conduction and switching

loss to maximize the efficiency of any frequency

converter. Furthermore, the slightly positive

V_CE(sat)temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packaging

STGB30H60DLLFBAG

GB30H60DLLFB

D²PAK

Tape and reel

October 2016

DocID029886 Rev 1

1/17

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...17

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