5秒后页面跳转
STGB35N35LZT4TRL PDF预览

STGB35N35LZT4TRL

更新时间: 2024-01-14 21:41:41
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管功率控制光电二极管
页数 文件大小 规格书
17页 741K
描述
40A, 380V, N-CHANNEL IGBT, ROHS COMPLIANT, D2PAK-3

STGB35N35LZT4TRL 技术参数

生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PDSO-G2针数:3
Reach Compliance Code:unknown风险等级:5.84
其他特性:VOLTAGE CLAMPING外壳连接:COLLECTOR
最大集电极电流 (IC):40 A集电极-发射极最大电压:380 V
配置:SINGLE WITH BUILT-IN DIODE AND RESISTORJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):37000 ns
标称接通时间 (ton):7600 nsBase Number Matches:1

STGB35N35LZT4TRL 数据手册

 浏览型号STGB35N35LZT4TRL的Datasheet PDF文件第2页浏览型号STGB35N35LZT4TRL的Datasheet PDF文件第3页浏览型号STGB35N35LZT4TRL的Datasheet PDF文件第4页浏览型号STGB35N35LZT4TRL的Datasheet PDF文件第5页浏览型号STGB35N35LZT4TRL的Datasheet PDF文件第6页浏览型号STGB35N35LZT4TRL的Datasheet PDF文件第7页 
STGB35N35LZ  
STGP35N35LZ  
EAS 450 mJ, 345 V, internally clamped IGBT  
Features  
TAB  
Low threshold voltage  
Low on-voltage drop  
TAB  
High voltage clamping feature  
3
1
Gate and gate-emitter integrated resistors  
TAB  
D²PAK  
3
2
1
I²PAK  
Application  
Automotive ignition  
3
2
1
TO-220  
Description  
This application specific IGBT utilizes the most  
advanced PowerMESH™ technology. The built-in  
Zener diodes between gate-collector and gate-  
emitter provide overvoltage protection  
Figure 1.  
Internal schematic diagram  
C (2 or TAB)  
capabilities. The device also exhibits low on-state  
voltage drop and low threshold drive for use in  
automotive ignition system.  
R
G
G (1)  
R
GE  
E (3)  
SC30180  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STGB35N35LZ-1  
STGB35N35LZT4  
STGP35N35LZ  
GB35N35LZ  
GB35N35LZ  
GP35N35LZ  
PAK  
PAK  
TO-220  
Tube  
Tape and reel  
Tube  
June 2010  
Doc ID 12253 Rev 5  
1/17  
www.st.com  
17  

与STGB35N35LZT4TRL相关器件

型号 品牌 获取价格 描述 数据表
STGB3NB60FD STMICROELECTRONICS

获取价格

N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2
STGB3NB60FDT4 STMICROELECTRONICS

获取价格

N-CHANNEL 3A - 600V TO-220/TO-220FP/DPAK/D2PAK POWERMESH IGBT
STGB3NB60HD STMICROELECTRONICS

获取价格

N-CHANNEL 3A - 600V TO-263 PowerMESH IGBT
STGB3NB60HD_03 STMICROELECTRONICS

获取价格

N-CHANNEL 3A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT
STGB3NB60HDT4 STMICROELECTRONICS

获取价格

N-CHANNEL 3A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT
STGB3NB60K STMICROELECTRONICS

获取价格

N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK Power
STGB3NB60KD STMICROELECTRONICS

获取价格

N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK Power
STGB3NB60KDT4 STMICROELECTRONICS

获取价格

N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK Power
STGB3NB60MD ETC

获取价格

N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT
STGB3NB60MDT4 ETC

获取价格

N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT