Datasheet > STGB30H65DFB2

STGB30H65DFB2

更新时间： 2024-11-20 14:58:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
17页	645K
描述
Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package

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STGB30H65DFB2 数据手册

STGB30H65DFB2

Datasheet

Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT

in a D²PAK package

Features

TAB

•

Maximum junction temperature : T_J= 175 °C

Low V_CE(sat)= 1.65 V (typ.) @ I_C= 30 A

Very fast and soft recovery co-packaged diode

Minimized tail current

D²

PAK

Tight parameter distribution

Low thermal resistance

Positive V_CE(sat)temperature coefficient

C(2, TAB)

Applications

G(1)

•

Welding

Power factor correction

UPS

Solar inverters

Chargers

E(3)

NG1E3C2T

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced

proprietary trench gate field-stop structure. The performance of the HB2 series is

optimized in terms of conduction, thanks to a better V_CE(sat)behavior at low current

values, as well as in terms of reduced switching energy. A very fast soft recovery

diode is co-packaged in antiparallel with the IGBT. The result is a product specifically

designed to maximize efficiency for a wide range of fast applications.

Product status link

STGB30H65DFB2

Product summary

Order code

Marking

STGB30H65DFB2

G30H65DFB2

D²PAK

Package

Packing

Tape and reel

DS13253 - Rev 1 - February 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...17

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