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STGB20NB37LZ_03 PDF预览

STGB20NB37LZ_03

更新时间: 2024-09-24 04:01:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
8页 382K
描述
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH TM IGBT

STGB20NB37LZ_03 数据手册

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STGB20NB37LZ  
N-CHANNEL CLAMPED 20A - D²PAK  
INTERNALLY CLAMPED PowerMESH™ IGBT  
TYPE  
V
V
I
C
CES  
CE(sat)  
STGB20NB37LZ  
CLAMPED  
< 2.0 V  
20 A  
POLYSILICON GATE VOLTAGE DRIVEN  
LOW THRESHOLD VOLTAGE  
LOW ON-VOLTAGE DROP  
3
LOW GATE CHARGE  
1
HIGH CURRENT CAPABILITY  
HIGH VOLTAGE CLAMPING FEATURE  
ADD SUFFIX “T4” FOR ORDERING IN TAPE &  
REEL  
D²PAK  
DESCRIPTION  
INTERNAL SCHEMATIC DIAGRAM  
Using the latest high voltage technology based on a  
patented strip layout, STMicroelectronics has de-  
signed an advanced family of IGBTs, the Power-  
MESH IGBTs, with outstanding performances.  
The built in collector-gate zener exhibits a very pre-  
cise active clamping while the gate-emitter zener  
supplies an ESD protection.  
APPLICATIONS  
AUTOMOTIVE IGNITION  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
PACKAGE  
PACKAGING  
2
STGB20NB37LZT4  
GB20NB37LZ  
TAPE & REEL  
D PAK  
September 2003  
1/8  

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