品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | 双极性晶体管 | |
页数 | 文件大小 | 规格书 |
8页 | 382K | |
描述 | ||
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH TM IGBT |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGB20NB37LZT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH TM IGBT | |
STGB20NB41LZ | STMICROELECTRONICS |
获取价格 |
N-CHANNEL CLAMPED 20A - DPAK INTERNALLY CLAMPED PowerMESH IGBT | |
STGB20NB41LZT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL CLAMPED 20A - DPAK INTERNALLY CLAMPED PowerMESH IGBT | |
STGB20NC60V | STMICROELECTRONICS |
获取价格 |
30 A - 600 V - very fast IGBT | |
STGB20NC60VT4 | STMICROELECTRONICS |
获取价格 |
60A, 600V, N-CHANNEL IGBT, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | |
STGB25N36LZAG | STMICROELECTRONICS |
获取价格 |
Automotive-grade 360 V internally clamped IGBT ESCIS 300 mJ | |
STGB25N40LZAG | STMICROELECTRONICS |
获取价格 |
汽车级400 V内部钳制IGBT ESCIS 320 mJ | |
STGB30H60DFB | STMICROELECTRONICS |
获取价格 |
600 V、30 A高速沟槽栅场截止HB系列IGBT | |
STGB30H60DLLFBAG | STMICROELECTRONICS |
获取价格 |
汽车级600 V、30 A高速沟槽栅场截止HB系列IGBT | |
STGB30H65DFB2 | STMICROELECTRONICS |
获取价格 |
Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package |