是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | D2PAK | 包装说明: | ROHS COMPLIANT, TO-263, D2PAK-3 |
针数: | 4 | Reach Compliance Code: | not_compliant |
风险等级: | 5.69 | Is Samacsys: | N |
最大集电极电流 (IC): | 35 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 门极发射器阈值电压最大值: | 6.5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 245 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 125 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 270 ns |
标称接通时间 (ton): | 38 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGB19NC60WT4 | STMICROELECTRONICS |
获取价格 |
40A, 600V, N-CHANNEL IGBT, TO-263AB, TO-263, D2PAK-3 |
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STGB20H60DF | STMICROELECTRONICS |
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600 V、20 A高速沟槽栅场截止IGBT |
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STGB20H65DFB2 | STMICROELECTRONICS |
获取价格 |
Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package |
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STGB20H65FB2 | STMICROELECTRONICS |
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Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package |
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STGB20M65DF2 | STMICROELECTRONICS |
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沟槽栅场截止IGBT,M系列,650 V、20 A,低损耗 |
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STGB20N40LZ | STMICROELECTRONICS |
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汽车级390 V内部钳制IGBT ESCIS 300 mJ |
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STGB20N45LZAG | STMICROELECTRONICS |
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汽车级450 V内部钳制IGBT ESCIS 300 mJ |
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STGB20NB32LZ | STMICROELECTRONICS |
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N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALL |
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STGB20NB32LZ-1 | STMICROELECTRONICS |
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N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALL |
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STGB20NB32LZT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH TM IGBT |
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