Datasheet > STGB20H60DF

STGB20H60DF

更新时间： 2023-12-20 18:45:52

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
22页	1853K
描述
600 V、20 A高速沟槽栅场截止IGBT

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中文翻译

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数据手册

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STGB20H60DF 数据手册

STGB20H60DF,

STGF20H60DF, STGP20H60DF

600 V, 20 A high speed

trench gate field-stop IGBT

Datasheet

production data

Features

TAB

• High speed switching

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Short-circuit rated

TO-220

TO-220FP

• Ultrafast soft recovery antiparallel diode

TAB

Applications

• Motor control

• UPS, PFC

D²PAK

Figure 1. Internal schematic diagram

Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. This IGBT series offers the optimum

compromise between conduction and switching

losses, maximizing the efficiency of very high

frequency converters. Furthermore, a positive

C (2, TAB)

G (1)

V_CE(sat)temperature coefficient and very tight

parameter distribution result in easier paralleling

operation.

E (3)

Table 1. Device summary

Order codes

Marking

Packages

Packaging

STGB20H60DF

STGF20H60DF

STGP20H60DF

GB20H60DF

GF20H60DF

GP20H60DF

D²PAK

TO-220FP

TO-220

Tape and reel

Tube

June 2013

DocID023740 Rev 4

1/22

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...22

中文翻译

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