Datasheet > STGB20H60DF

STGB20H60DF

更新时间： 2024-11-24 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
22页	1853K
描述
600 V、20 A高速沟槽栅场截止IGBT

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

STGB20H60DF 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	20 weeks
风险等级：	2.1	最大集电极电流 (IC)：	40 A
集电极-发射极最大电压：	600 V	门极-发射极最大电压：	20 V
最高工作温度：	150 °C	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	100 W
子类别：	Insulated Gate BIP Transistors	表面贴装：	YES
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STGB20H60DF 数据手册

STGB20H60DF,

STGF20H60DF, STGP20H60DF

600 V, 20 A high speed

trench gate field-stop IGBT

Datasheet

production data

Features

TAB

• High speed switching

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Short-circuit rated

TO-220

TO-220FP

• Ultrafast soft recovery antiparallel diode

TAB

Applications

• Motor control

• UPS, PFC

D²PAK

Figure 1. Internal schematic diagram

Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. This IGBT series offers the optimum

compromise between conduction and switching

losses, maximizing the efficiency of very high

frequency converters. Furthermore, a positive

C (2, TAB)

G (1)

V_CE(sat)temperature coefficient and very tight

parameter distribution result in easier paralleling

operation.

E (3)

Table 1. Device summary

Order codes

Marking

Packages

Packaging

STGB20H60DF

STGF20H60DF

STGP20H60DF

GB20H60DF

GF20H60DF

GP20H60DF

D²PAK

TO-220FP

TO-220

Tape and reel

Tube

June 2013

DocID023740 Rev 4

1/22

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...22

中文翻译

下载PDF

与STGB20H60DF相关器件

型号	品牌	获取价格	描述	数据表
STGB20H65DFB2	STMICROELECTRONICS	获取价格	Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package
STGB20H65FB2	STMICROELECTRONICS	获取价格	Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package
STGB20M65DF2	STMICROELECTRONICS	获取价格	沟槽栅场截止IGBT，M系列，650 V、20 A，低损耗
STGB20N40LZ	STMICROELECTRONICS	获取价格	汽车级390 V内部钳制IGBT ESCIS 300 mJ
STGB20N45LZAG	STMICROELECTRONICS	获取价格	汽车级450 V内部钳制IGBT ESCIS 300 mJ
STGB20NB32LZ	STMICROELECTRONICS	获取价格	N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALL
STGB20NB32LZ-1	STMICROELECTRONICS	获取价格	N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALL
STGB20NB32LZT4	STMICROELECTRONICS	获取价格	N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH TM IGBT
STGB20NB37LZ	STMICROELECTRONICS	获取价格	N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
STGB20NB37LZ_03	STMICROELECTRONICS	获取价格	N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH TM IGBT