Datasheet > STF21N65M5(045Y)

STF21N65M5(045Y)

更新时间： 2024-11-27 14:58:11

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	968K
描述
N沟道650 V、0.150 Ohm典型值、17 A MDmesh(TM) V功率MOSFET，TO-220FP窄引线封装

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技术参数
数据手册

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STF21N65M5(045Y) 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.76	Base Number Matches：	1

STF21N65M5(045Y) 数据手册

STF21N65M5(045Y)

N-channel 650 V, 0.150 Ω typ., 19 A MDmesh™ V Power MOSFET

in a TO-220FP narrow leads package

Datasheet production data

Features

V_DS

T_Jmax

R_DS(on)

max

Order code

I_D

P_TOT

STF21N65M5(045Y) 710 V 0.179 Ω

19 A 30 W

• Worldwide best R_DS(on)* area

• Higher V_DSSrating

• High dv/dt capability

TO-220FP

narrow leads

• Excellent switching performance

• 100% avalanche tested

Applications

Figure 1. Internal schematic diagram

• Switching applications

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Description

This device is an N-channel MDmesh™ V Power

MOSFET based on an innovative proprietary

vertical process technology, which is combined

with STMicroelectronics’ well-known

*ꢅꢁꢇ

PowerMESH™ horizontal layout structure. The

resulting product has extremely low on-

resistance, which is unmatched among silicon-

based Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

6ꢅꢈꢇ

$0ꢀꢁꢂꢃꢄYꢁ

Table 1. Device summary

Order code

Marking

21N65M5

Packages

Packaging

STF21N65M5(045Y)

TO-220FP narrow leads

Tube

April 2014

DocID023148 Rev 3

1/13

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...13

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