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STF21N90K5 PDF预览

STF21N90K5

更新时间: 2024-11-23 12:36:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
22页 998K
描述
N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH™ 5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages

STF21N90K5 数据手册

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STB21N90K5, STF21N90K5, STP21N90K5,  
STW21N90K5  
N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH™ 5  
Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages  
Datasheet — production data  
Features  
TAB  
Order codes VDSS RDS(on)max  
ID  
PW  
3
3
1
2
STB21N90K5  
STF21N90K5  
250 W  
40 W  
1
2
D PAK  
TO-220FP  
900 V < 0.299 Ω 18.5 A  
TAB  
STP21N90K5  
STW21N90K5  
250 W  
TO-220 worldwide best RDS(on)  
Worldwide best FOM (figure of merit)  
Ultra low gate charge  
3
2
3
1
2
1
TO-220  
TO-247  
100% avalanche tested  
Zener-protected  
Figure 1.  
Internal schematic diagram  
D(2, TAB)  
Applications  
Switching applications  
Description  
G(1)  
These devices are N-channel Power MOSFETs  
developed using SuperMESH™ 5 technology.  
This revolutionary, avalanche-rugged, high  
voltage Power MOSFET technology is based on  
an innovative proprietary vertical structure. The  
result is a drastic reduction in on-resistance and  
ultra low gate charge for applications which  
require superior power density and high  
efficiency.  
S(3)  
AM01476v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB21N90K5  
STF21N90K5  
STP21N90K5  
STW21N90K5  
D2PAK  
TO-220FP  
TO-220  
Tape and reel  
21N90K5  
Tube  
TO-247  
October 2012  
Doc ID 16744 Rev 6  
1/22  
This is information on a product in full production.  
www.st.com  
22  

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