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STF25NM60ND PDF预览

STF25NM60ND

更新时间: 2024-11-23 09:00:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
18页 597K
描述
N-channel 600 V, 0.13 Ω, 21 A FDmesh? II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

STF25NM60ND 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.98
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:222090Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-220FP_1Samacsys Released Date:2015-11-03 12:30:39
Is Samacsys:N雪崩能效等级(Eas):850 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):21 A
最大漏极电流 (ID):21 A最大漏源导通电阻:0.16 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):40 W最大脉冲漏极电流 (IDM):84 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STF25NM60ND 数据手册

 浏览型号STF25NM60ND的Datasheet PDF文件第2页浏览型号STF25NM60ND的Datasheet PDF文件第3页浏览型号STF25NM60ND的Datasheet PDF文件第4页浏览型号STF25NM60ND的Datasheet PDF文件第5页浏览型号STF25NM60ND的Datasheet PDF文件第6页浏览型号STF25NM60ND的Datasheet PDF文件第7页 
STx25NM60ND  
N-channel 600 V, 0.13 , 21 A FDmesh™ II Power MOSFET  
D2PAK, I2PAK, TO-220FP, TO-220, TO-247  
Features  
VDSS  
TJMAX  
@
Type  
RDS(on) max  
ID  
3
3
1
3
2
2
1
1
STB25NM60ND  
STI25NM60ND  
STF25NM60ND  
STP25NM60ND  
STW25NM60ND  
21 A  
21 A  
D2PAK  
TO-220  
TO-220FP  
650 V  
0.16 Ω  
21 A(1)  
21 A  
21 A  
1. Limited only by maximum temperature allowed  
3
2
3
2
1
1
The worldwide best R  
*area amongst the  
I2PAK  
TO-247  
DS(on)  
fast recovery diode devices  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Extremely high dv/dt and avalanche  
capabilities  
Application  
Switching applications  
Description  
The FDmesh™ II series belongs to the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company's strip layout  
and associates all advantages of reduced on-  
resistance and fast switching with an intrinsic fast-  
recovery body diode.It is therefore strongly  
recommended for bridge topologies, in ZVS  
phase-shift converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB25NM60ND  
STI25NM60ND  
STF25NM60ND  
STP25NM60ND  
STW25NM60ND  
25NM60ND  
25NM60ND  
25NM60ND  
25NM60ND  
25NM60ND  
PAK  
PAK  
Tape and reel  
Tube  
TO-220FP  
TO-220  
TO-247  
Tube  
Tube  
Tube  
March 2009  
Rev 4  
1/18  
www.st.com  
18  

STF25NM60ND 替代型号

型号 品牌 替代类型 描述 数据表
STF28N60DM2 STMICROELECTRONICS

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N沟道600 V、0.13 Ohm典型值、21 A MDmesh DM2功率MOSFET,
STF23NM60ND STMICROELECTRONICS

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N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II
STF23NM60N STMICROELECTRONICS

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N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2

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