Datasheet > STF33N60DM2

STF33N60DM2

更新时间： 2024-09-14 14:57:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	705K
描述
N沟道600 V、0.110 Ohm典型值、24 A MDmesh DM2功率MOSFET，TO-220FP封装

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STF33N60DM2 数据手册

STF33N60DM2

N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2

Power MOSFET in TO-220FP package

Datasheet - production data

Features

Order code

V_DS@ T_Jmax.R_DS(on)max.

650 V 0.130 Ω

I_D

STF33N60DM2

24 A



Fast-recovery body diode

Extremely low gate charge and input

capacitance



Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

TO-220FP

Figure 1: Internal schematic diagram

Applications

D(2)



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Q_rr)

and time (t_rr) combined with low R_DS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

G(1)

S(3)

AM15572v1_no_tab

Table 1: Device summary

Order code

Marking

Package

Packing

STF33N60DM2

33N60DM2

TO-220FP

Tube

July 2016

DocID026861 Rev 2

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

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