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STF28N60M2 PDF预览

STF28N60M2

更新时间: 2024-11-06 14:57:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 883K
描述
N沟道600 V、0.135 Ohm典型值、22 A MDmesh M2功率MOSFET,TO-220FP封装

STF28N60M2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:5.69峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STF28N60M2 数据手册

 浏览型号STF28N60M2的Datasheet PDF文件第2页浏览型号STF28N60M2的Datasheet PDF文件第3页浏览型号STF28N60M2的Datasheet PDF文件第4页浏览型号STF28N60M2的Datasheet PDF文件第5页浏览型号STF28N60M2的Datasheet PDF文件第6页浏览型号STF28N60M2的Datasheet PDF文件第7页 
STF28N60M2,  
STFI28N60M2  
N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2  
Power MOSFETs in TO-220FP and I2PAKFP packages  
Datasheet production data  
-
Features  
Order code VDS @ TJmax RDS(on) max  
ID  
STF28N60M2  
650 V  
0.150 Ω  
22 A  
STFI28N60M2  
3
Extremely low gate charge  
2
1
Excellent output capacitance (Coss) profile  
100% avalanche tested  
TO-220FP  
1
2
3
I2PAKFP (TO-281)  
Zener-protected  
Applications  
Switching applications  
Figure 1. Internal schematic diagram  
LCC converters, resonant converters  
Description  
These devices are N-channel Power MOSFETs  
developed using MDmesh™ M2 technology.  
Thanks to their strip layout and improved vertical  
structure, the devices exhibit low on-resistance  
and optimized switching characteristics, rendering  
them suitable for the most demanding high  
efficiency converters.  
AM15572v1  
Table 1. Device summary  
Order code  
Marking  
Package  
Packaging  
STF28N60M2  
STFI28N60M2  
TO-220FP  
28N60M2  
Tube  
I2PAKFP (TO-281)  
February 2015  
DocID025255 Rev 3  
1/15  
This is information on a product in full production.  
www.st.com  

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