5秒后页面跳转
STF25NM60N PDF预览

STF25NM60N

更新时间: 2024-11-25 21:55:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
12页 277K
描述
N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET

STF25NM60N 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220FP, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.41
Is Samacsys:N雪崩能效等级(Eas):850 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):21 A
最大漏源导通电阻:0.16 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):84 A
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STF25NM60N 数据手册

 浏览型号STF25NM60N的Datasheet PDF文件第2页浏览型号STF25NM60N的Datasheet PDF文件第3页浏览型号STF25NM60N的Datasheet PDF文件第4页浏览型号STF25NM60N的Datasheet PDF文件第5页浏览型号STF25NM60N的Datasheet PDF文件第6页浏览型号STF25NM60N的Datasheet PDF文件第7页 
STP25NM60N - STF25NM60N  
STB25NM60N/-1 - STW25NM60N  
N-CHANNEL 600V 0.140-20A TO-220/FP/D²/I²PAK/TO-247  
SECOND GENERATION MDmesh™ MOSFET  
PRODUCT PREVIEW  
Table 1: General Features  
Figure 1: Package  
TYPE  
V
DSS  
(@Tjmax)  
R
I
D
DS(on)  
STB25NM60N-1  
STF25NM60N  
STP25NM60N  
STW25NM60N  
STB25NM60N  
650 V  
650 V  
650 V  
650 V  
650 V  
< 0.170 Ω  
< 0.170 Ω  
< 0.170 Ω  
< 0.170 Ω  
< 0.170 Ω  
20 A  
20(*) A  
20 A  
20 A  
20 A  
3
3
2
1
2
1
TO-220  
TO-220FP  
WORLD’S LOWEST ON RESISTANCE  
TYPICAL R (on) = 0.140 Ω  
HIGH dv/dt AND AVALANCHE CAPABILITIES  
100% AVALANCHE TESTED  
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
3
DS  
1
D²PAK  
3
2
1
3
2
1
²
I PAK  
LOW GATE INPUT RESISTANCE  
TO-247  
Figure 2: Internal Schematic Diagram  
DESCRIPTION  
The STP25NM60N is realized with the second  
generation of MDmesh Technology. This revolu-  
tionary MOSFET associates a new vertical struc-  
ture to the Company's strip layout to yield the  
world's lowest on-resistance and gate charge. It is  
therefore suitable for the most demanding high ef-  
ficiency converters  
APPLICATIONS  
The MDmesh™ II family is very suitable for in-  
crease the power density of high voltage convert-  
ers allowing system miniaturization and higher  
efficiencies.  
Table 2: Order Code  
SALES TYPE  
STB25NM60N-1  
STF25NM60N  
STP25NM60N  
STW25NM60N  
STB25NM60N  
MARKING  
B25NM60N  
F25NM60N  
P25NM60N  
W25NM60N  
B25NM60N  
PACKAGE  
I²PAK  
PACKAGING  
TUBE  
TO-220FP  
TO-220  
TO-247  
D²PAK  
TUBE  
TUBE  
TUBE  
TAPE & REEL  
Rev. 4  
June 2005  
1/12  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

STF25NM60N 替代型号

型号 品牌 替代类型 描述 数据表
STF26NM60N STMICROELECTRONICS

类似代替

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-2

与STF25NM60N相关器件

型号 品牌 获取价格 描述 数据表
STF25NM60ND STMICROELECTRONICS

获取价格

N-channel 600 V, 0.13 Ω, 21 A FDmesh? II Powe
STF26N60DM6 STMICROELECTRONICS

获取价格

N沟道600 V、165 mOhm典型值、18 A MDmesh DM6功率MOSFET,
STF26N60M2 STMICROELECTRONICS

获取价格

N沟道600 V、0.14 Ohm典型值、20 A MDmesh M2功率MOSFET,T
STF26N65DM2 STMICROELECTRONICS

获取价格

N沟道650 V、0.156 Ohm典型值、20 A MDmesh DM2功率MOSFET
STF26NM60N STMICROELECTRONICS

获取价格

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-2
STF26NM60ND STMICROELECTRONICS

获取价格

N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-2
STF27N60M2-EP STMICROELECTRONICS

获取价格

N沟道600 V、0.150 Ohm典型值、20 A MDmesh M2 EP功率MOSF
STF2818X0504-A ETC

获取价格

Stepping Motor
STF28-461 CRANE

获取价格

EMI INPUT FILTER 28 VOLT INPUT
STF28-461/HH CRANE

获取价格

STF28-461 EMI Input Filters