是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | ROHS COMPLIANT, TO-220FP, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
风险等级: | 5.79 | Is Samacsys: | N |
雪崩能效等级(Eas): | 480 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 18 A | 最大漏极电流 (ID): | 18 A |
最大漏源导通电阻: | 0.19 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 30 W | 最大脉冲漏极电流 (IDM): | 72 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STF21NM60N | STMICROELECTRONICS |
获取价格 |
N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-2 | |
STF21NM60ND | STMICROELECTRONICS |
获取价格 |
N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Powe | |
STF2222A | STMICROELECTRONICS |
获取价格 |
SMALL SIGNAL NPN TRANSISTOR | |
STF22N60DM6 | STMICROELECTRONICS |
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Power Field-Effect Transistor | |
STF22N60M6 | STMICROELECTRONICS |
获取价格 |
N沟道600 V、196 mOhm典型值、15 A MDmesh M6功率MOSFET,T | |
STF22NM50 | ETC |
获取价格 |
N-CHANNEL 500 V - 0.16 OHM - 20 A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET | |
STF22NM60 | STMICROELECTRONICS |
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N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2P | |
STF22NM60N | STMICROELECTRONICS |
获取价格 |
N-channel 600 V, 0.2 Ω, 16 A MDmesh⢠II Po | |
STF23N80K5 | STMICROELECTRONICS |
获取价格 |
N沟道800 V、0.23 Ohm典型值、16 A MDmesh K5功率MOSFET,T | |
STF23NM50N | STMICROELECTRONICS |
获取价格 |
N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-22 |