Datasheet > STF25N80K5

STF25N80K5

更新时间： 2024-11-24 14:57:31

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
23页	1692K
描述
N沟道800 V、0.19 Ohm典型值、19.5 A MDmesh K5功率MOSFET，TO-220FP封装

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数据手册

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STF25N80K5 数据手册

STB25N80K5, STF25N80K5,

STP25N80K5, STW25N80K5

N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs

in D²PAK, TO-220FP, TO-220 and TO-247 packages

Datasheet

−

production data

Features

TAB

V_DS

T_Jmax

R_DS(on)

max

Order code

I_D

P_TOT

STB25N80K5

STF25N80K5

STP25N80K5

STW25N80K5

250 W

40 W

D²PAK

TO-220FP

TAB

800 V < 0.260 Ω 19.5 A

250 W

•

Industry’s lowest R_DS(on)x area

Industry’s best figure of merit (FoM

Ultra low gate charge

TO-220

TO-247

100% avalanche tested

Zener-protected

Figure 1. Internal schematic diagram

'ꢀꢁꢂꢃ7$%ꢄ

Applications

•

Switching applications

*ꢀꢅꢄ

Description

These very high voltage N-channel Power

MOSFETs are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

6ꢀꢆꢄ

AM01476v1

Table 1. Device summary

Order code

Marking

Package

Packaging

STB25N80K5

STF25N80K5

STP25N80K5

STW25N80K5

D²PAK

TO-220FP

TO-220

Tape and reel

25N80K5

Tube

TO-247

October 2014

DocID023466 Rev 3

1/23

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...23

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