Datasheet > STF22N60DM6

STF22N60DM6

更新时间： 2024-11-23 20:37:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	453K
描述
Power Field-Effect Transistor

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技术参数
数据手册

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STF22N60DM6 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	Factory Lead Time：	16 weeks
风险等级：	2.13	Base Number Matches：	1

STF22N60DM6 数据手册

STF22N60DM6

Datasheet

N-channel 600 V, 200 mΩ typ., 15 A, MDmesh DM6 Power MOSFET

in a TO‑220FP package

Features

DS(on)

max.

Order code

STF22N60DM6

600 V

240 mΩ

15 A

•

Fast-recovery body diode

Lower R_DS(on)per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

TO-220FP

Extremely high dv/dt ruggedness

Zener-protected

D(2)

High-creepage package

G(1)

Applications

•

Switching applications

Description

S(3)

AM15572v1_no_tab

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation, DM6

combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STF22N60DM6

Product summary

Order code

Marking

STF22N60DM6

22N60DM6

TO-220FP

Tube

Package

Packing

DS13120 - Rev 1 - October 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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