5秒后页面跳转
STF22NM60 PDF预览

STF22NM60

更新时间: 2024-09-15 22:21:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
11页 387K
描述
N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh⑩Power MOSFET

STF22NM60 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.75
Is Samacsys:N雪崩能效等级(Eas):650 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):22 A
最大漏极电流 (ID):22 A最大漏源导通电阻:0.25 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):45 W
最大脉冲漏极电流 (IDM):80 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STF22NM60 数据手册

 浏览型号STF22NM60的Datasheet PDF文件第2页浏览型号STF22NM60的Datasheet PDF文件第3页浏览型号STF22NM60的Datasheet PDF文件第4页浏览型号STF22NM60的Datasheet PDF文件第5页浏览型号STF22NM60的Datasheet PDF文件第6页浏览型号STF22NM60的Datasheet PDF文件第7页 
STP22NM60 - STF22NM60  
STB22NM60 - STB22NM60-1 - STW22NM60  
N-CHANNEL 600V - 0.19 - 22A TO-220/FP/D2PAK/I2PAK/TO-247  
MDmesh™Power MOSFET  
ADVANCED DATA  
TYPE  
V
DSS  
R
R
*Q  
I
D
DS(on)  
ds(on)  
g
STP22NM60  
STF22NM60  
STB22NM60  
STB22NM60-1  
STW22NM60  
600 V  
600 V  
600 V  
600 V  
600 V  
< 0.25 7.6 *nC  
< 0.25 7.6 *nC  
< 0.25 7.6 *nC  
< 0.25 7.6 *nC  
< 0.25 7.6 *nC  
22 A  
22 A  
22 A  
22 A  
22 A  
3
3
2
2
1
1
TO-220  
TO-220FP  
TYPICAL R (on) = 0.19Ω  
DS  
HIGH dv/dt AND AVALANCHE CAPABILITIES  
100% AVALANCHE TESTED  
LOW INPUT CAPACITANCE AND GATE CHARGE  
LOW GATE INPUT RESISTANCE  
3
2
1
TO-247  
3
1
3
2
1
I2PAK  
D2PAK  
DESCRIPTION  
This improved version of MDmesh™ which is based  
on Multiple Drain process represents the new bench-  
mark in high voltage MOSFETs. The resulting product  
exhibits even lower on-resistance, impressively high  
dv/dt and excellent avalanche characteristics. The  
adoption of the Company’s proprietary strip technique  
yields overall performances that are significantly better  
than that of similar competition’s products.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
The MDmesh™ family is very suitable for increasing  
power density of high voltage converters allowing sys-  
tem miniaturization and higher efficiencies.  
ORDERING INFORMATION  
SALES TYPE  
STP22NM60  
STF22NM60  
STB22NM60  
STB22NM60-1  
STW22NM60  
MARKING  
P22NM60  
PACKAGE  
TO-220  
TO-220FP  
D²PAK  
PACKAGING  
TUBE  
F22NM60  
TUBE  
B22NM60T4  
B22NM60-1  
W22NM60  
TAPE & REEL  
TUBE  
I²PAK  
TO-247  
TUBE  
June 2003  
1/11  

与STF22NM60相关器件

型号 品牌 获取价格 描述 数据表
STF22NM60N STMICROELECTRONICS

获取价格

N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Po
STF23N80K5 STMICROELECTRONICS

获取价格

N沟道800 V、0.23 Ohm典型值、16 A MDmesh K5功率MOSFET,T
STF23NM50N STMICROELECTRONICS

获取价格

N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-22
STF23NM60N STMICROELECTRONICS

获取价格

N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2
STF23NM60ND STMICROELECTRONICS

获取价格

N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II
STF24N60DM2 STMICROELECTRONICS

获取价格

N沟道600 V、0.175 Ohm典型值、18 A MDmesh DM2功率MOSFET
STF24N60M2 STMICROELECTRONICS

获取价格

N沟道600 V、0.168 Ohm典型值、18 A MDmesh M2功率MOSFET,
STF24N60M6 STMICROELECTRONICS

获取价格

N沟道600 V、162 mOhm典型值、17 A MDmesh M6功率MOSFET,T
STF24N65M2 STMICROELECTRONICS

获取价格

N沟道650 V、0.185 Ohm典型值、16 A MDmesh M2功率MOSFET,
STF24NF12 STMICROELECTRONICS

获取价格

N-channel 120V - 0.070Ω - 24A TO-220FP Low ga