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STF21NM60N PDF预览

STF21NM60N

更新时间: 2024-11-06 06:14:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
18页 563K
描述
N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh™ Power MOSFET

STF21NM60N 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220FP, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:8.58
Is Samacsys:N雪崩能效等级(Eas):610 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):17 A
最大漏极电流 (ID):17 A最大漏源导通电阻:0.22 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):30 W
最大脉冲漏极电流 (IDM):68 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STF21NM60N 数据手册

 浏览型号STF21NM60N的Datasheet PDF文件第2页浏览型号STF21NM60N的Datasheet PDF文件第3页浏览型号STF21NM60N的Datasheet PDF文件第4页浏览型号STF21NM60N的Datasheet PDF文件第5页浏览型号STF21NM60N的Datasheet PDF文件第6页浏览型号STF21NM60N的Datasheet PDF文件第7页 
STP21NM60N-F21NM60N-STW21NM60N  
STB21NM60N-STB21NM60N-1  
N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -  
I2PAK - TO-247 second generation MDmesh™ Power MOSFET  
Features  
VDSS  
(@Tjmax)  
RDS(on)  
max  
Type  
ID  
3
3
3
2
1
2
1
STB21NM60N  
STB21NM60N-1  
STF21NM60N  
STP21NM60N  
STW21NM60N  
650 V  
650 V  
650 V  
650 V  
650 V  
< 0.22 Ω  
< 0.22 Ω  
< 0.22 Ω  
< 0.22 Ω  
< 0.22 Ω  
17 A  
17 A  
1
D2PAK  
TO-220  
TO-220FP  
17 A(1)  
17 A  
17 A  
1. Limited by maximum temperature allowed  
3
3
2
2
1
1
100% avalanche tested  
I2PAK  
TO-247  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices implements the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB21NM60N  
STB21NM60N-1  
STF21NM60N  
STP21NM60N  
STW21NM60N  
B21NM60N  
B21NM60N  
F21NM60N  
P21NM60N  
W21NM60N  
D2PAK  
I2PAK  
Tape and reel  
Tube  
TO-220FP  
TO-220  
TO-247  
Tube  
Tube  
Tube  
February 2008  
Rev 7  
1/18  
www.st.com  
18  

STF21NM60N 替代型号

型号 品牌 替代类型 描述 数据表
STF22NM60N STMICROELECTRONICS

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