STF20NM60FD

更新时间： 2024-11-23 13:14:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	304K
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中文翻译

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数据手册

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STF20NM60FD 数据手册

STB20NM60A-1

STP20NM60A - STF20NM60A

max

N-CHANNEL 650V@Tj

- 0.25Ω - 20A I²PAK/TO-220/TO-220FP

MDmesh™ MOSFET

TYPE

@Tj

DSS

max

DS(on)

STB20NM60A-1

STP20NM60A

STF20NM60A

650 V

< 0.29 Ω

20 A

■

TYPICAL R (on) = 0.25Ω

HIGH dv/dt

LOW INPUT CAPACITANCE AND GATE CHARGE

LOW GATE INPUT RESISTANCE

TO-220

I²PAK

DESCRIPTION

TO-220FP

The MDmesh™ is a new revolutionary MOSFET tech-

nology that associates the Multiple Drain process with

the Company’s PowerMESH™ horizontal layout. The

resulting product has an outstanding low on-resis-

tance, impressively high dv/dt and excellent avalanche

characteristics. The adoption of the Company’s propri-

etary strip technique yields overall dynamic perfor-

mance that is significantly better than that of similar

competition’s products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SPECIFICALLY DESIGNED FOR ADAPTORS IN

QUASI-RESONANT CONFIGURATION

ORDER CODES

PART NUMBER

MARKING

B20NM60A

P20NM60A

F20NM60A

PACKAGE

PACKAGING

TUBE

STB20NM60A-1

STP20NM60A

STF20NM60A

I PAK

TO-220

TUBE

TO-220FP

TUBE

March 2004

1/12

12 3 4 5 6 7...12

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