是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | D2PAK | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (Abs) (ID): | 85 A | 最大漏极电流 (ID): | 85 A |
最大漏源导通电阻: | 0.019 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 300 W |
最大脉冲漏极电流 (IDM): | 340 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB85NF3LL | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE | |
STB85NF3LL_06 | STMICROELECTRONICS |
获取价格 |
N-channel 30V - 0.006ohm - 85A - D2PAK Low gate charge STripFET TM II Power MOSFET | |
STB85NF3LL-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK L | |
STB85NF3LLT4 | STMICROELECTRONICS |
获取价格 |
N-channel 30V - 0.006ohm - 85A - D2PAK Low gate charge STripFET TM II Power MOSFET | |
STB85NF55 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 | |
STB85NF55_09 | STMICROELECTRONICS |
获取价格 |
N-channel 55 V, 0.0062 Ω, 80 A, TO-220, D2PAK | |
STB85NF55L | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 55V - 0.0060 ohm - 80A D2PAK/TO-220 | |
STB85NF55L_09 | STMICROELECTRONICS |
获取价格 |
N-channel 55 V, 0.0060 Ω, 80 A, TO-220, D2PAK | |
STB85NF55LT4 | STMICROELECTRONICS |
获取价格 |
N-channel 55 V, 0.0060 Ω, 80 A, TO-220, D2PAK | |
STB85NF55T4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB |