Datasheet > SSM4409GEM

SSM4409GEM

更新时间： 2022-12-19 02:58:04

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
5页	198K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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SSM4409GEM 数据手册

SSM4409GEM

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

PRODUCT SUMMARY

BV_DSS

R_DS(ON)

I_D

-35V

Simple Drive Requirement

Low On-resistance

7.5mΩ

-14.5A

Fast Switching Characteristic

RoHS Compliant

SO-8

DESCRIPTION

The Advanced Power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications such as

DC/DC converters.

Pb-free; RoHS-compliant

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

-35

Units

V_DS

V_GS

Gate-Source Voltage

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current^3a

Pulsed Drain Current¹

-14.5

-12

-50

P_D@T_A=25℃

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

THERMAL DATA

Symbol

Parameter

Thermal Resistance Junction-ambient^3a

Value

Unit

Rthj-a

Max

℃/W

08/04/2007 Rev.1.00

www.SiliconStandard.com

12 3 4 5

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