Datasheet > SIZ704DT

SIZ704DT

更新时间： 2024-11-15 09:25:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	160K
描述
N-Channel 30-V (D-S) MOSFETs

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New Product

SiZ704DT

Vishay Siliconix

N-Channel 30-V (D-S) MOSFETs

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A) Q_g(Typ.)

Definition

12^a

TrenchFET^®Power MOSFETs

100 % R_gTested

100 % UIS Tested

0.024 at V_GS= 10 V

0.030 at V_GS= 4.5 V

0.0135 at V_GS= 10 V

0.017 at V_GS= 4.5 V

•

Channel-1

Channel-2

3.8 nC

16^a

7.3 nC

• Compliant to RoHS Directive 2002/95/EC

IN 1

APPLICATIONS

•

Notebook System Power

POL

PowerPAIR™ 6 x 3.7

3.73 mm

•

Low Current DC/DC

G₁

G_HS

Pin 1

G /G

HS 1

V_IN

D₁

V_IN

N-Channel 1

MOSFET

D₁

V_IN

/S /D

1 2

S₁/D₂

S₂

G₂

V_SW

G_LS

GND

S₂

6.00 mm

GND

N-Channel 2

MOSFET

GND/S

Ordering Information: SiZ704DT-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Channel-1

Channel-2

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

12^a

9.4^{b, c}

7.5^{b, c}

12^a

3.1^{b, c}

16^a

14^{b, c}

11.2^{b, c}

16^a

3.7^{b, c}

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

I_D

Continuous Drain Current (T_J= 150 °C)

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

Source Drain Current Diode Current

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

12.9

P_D

Maximum Power Dissipation

3.7^{b, c}

2.4^{b, c}

4.5^{b, c}

2.9^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Channel-1

Typ. Max.

26 34

4.7 6.2

Channel-2

Typ. Max.

21 28

3.2 4.2

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Unit

t ≤ 10 s

°C/W

R_thJC

Steady State

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required

to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 72 °C/W for Channel-1 and 67 °C/W for Channel-2.

Document Number: 65367

S09-1921-Rev. A, 28-Sep-09

www.vishay.com

12 3 4 5 6 7...12

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与SIZ704DT相关器件

型号	品牌	获取价格	描述	数据表
SIZ704DT-T1-GE3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFETs
SIZ710DT	VISHAY	获取价格	N-Channel 20 V (D-S) MOSFETs
SIZ710DT_12	VISHAY	获取价格	N-Channel 20 V (D-S) MOSFETs
SIZ710DT-T1-GE3	VISHAY	获取价格	N-Channel 20 V (D-S) MOSFETs
SIZ728DT	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFETs
SIZ728DT_12	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFETs
SIZ728DT-T1-GE3	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFETs
SIZ730DT	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFETs
SIZ730DT_12	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFETs
SIZ730DT-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFETs

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