Datasheet > SIZ790DT

SIZ790DT

更新时间： 2024-09-30 09:25:03

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
14页	209K
描述
Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode

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SiZ790DT

Vishay Siliconix

Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)(Ω)

I_D(A) Q_g(Typ.)

16^a

SkyFET^®Monolithic TrenchFET^®

Power MOSFETs and Schottky Diode

100 % R_gTested

0.0093 at V_GS= 10 V

0.0130 at V_GS= 4.5 V

0.0047 at V_GS= 10 V

0.0059 at V_GS= 4.5 V

•

Channel-1

Channel-2

7.7 nC

•

35^a

100 % UIS Tested

17 nC

• Compliant to RoHS Directive 2002/95/EC

IN 1

APPLICATIONS

PowerPAIR^®6 x 3.7

•

System Power

- Notebook

- Server

G₁

3.73 mm

D₁

Pin 1

G_HS

D₁

•

POL

V_IN

N-Channel 1

MOSFET

V_IN

Synchronous Buck

Converter

S /D

D₁

S₁/D₂

S₂

G₂

Schottky

Diode

V_SW

G_LS

GND

S₂

6.00 mm

GND

N-Channel 2

MOSFET

Ordering Information: SiZ790DT-T1-GE3 (Lead (Pb)-free and Halogen-free)

GND/S

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Channel-1

Channel-2

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

16^a

12.9^{b, c}

10.3^{b, c}

16^a

3.2^{b, c}

35^a

23.4^{b, c}

18.7^{b, c}

100

35^a

3.8^{b, c}

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

I_D

Continuous Drain Current (T_J= 150 °C)

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

T_A= 25 °C

Continuous Source Drain Diode Current

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

3.9^{b, c}

2.5^{b, c}

4.6^{b, c}

3^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Channel-1

Typ. Max.

Channel-2

Typ. Max.

2.6

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Unit

t ≤ 10 s

Steady State

°C/W

R_thJC

3.5

4.6

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required

to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2.

Document Number: 67669

S11-0607-Rev. A, 04-Apr-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SIZ790DT相关器件

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SIZ790DT-T1-GE3	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode
SIZ900DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SIZ900DT-T1-GE3	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SIZ902DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
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