Datasheet > SiZF916DT

SiZF916DT

更新时间： 2024-10-01 14:54:43

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威世 - VISHAY		/
页数	文件大小	规格书
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Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

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SiZF916DT 数据手册

SiZF916DT

Vishay Siliconix

www.vishay.com

Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

FEATURES

• TrenchFET^®Gen IV power MOSFET

• SkyFET^®low-side MOSFET with integrated

Schottky

• 100 % R_gand UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

V_IN/D₁

APPLICATIONS

N-Channel 1

MOSFET

• CPU core power

PRODUCT SUMMARY

G_HS/G₁

• Computer / server peripherals

• POL

CHANNEL-1 CHANNEL-2

G₁Return/S₁

V_SW/S₁-D₂

_DS(V)

0.00400

0.00670

0.00125

0.00175

29.3

• Synchronous buck converter

• Telecom DC/DC

_DS(on)max. () at V_GS= 10 V

_DS(on)max. () at V_GS= 4.5 V

Schottky

Diode

G_LS/G₂

Q_gtyp. (nC)

_D(A) ^a

Configuration

N-Channel 2

MOSFET

Dual

GND/S₂

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAIR 6 x 5F

SiZF916DT-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

CHANNEL-1

CHANNEL-2

+16, -12

60 ^a

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

+20, -16

40 ^a

23 ^{b, c}

18.4 ^{b, c}

130

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous drain current (T_J= 150 °C)

I_D

45 ^{b, c}

36 ^{b, c}

110

60 ^a

7 ^{b, c}

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

2.8 ^{b, c}

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

11.3

26.6

3.4 ^{b, c}

2.2 ^{b, c}

4 ^{b, c}

2.6 ^{b, c}

L = 0.1 mH

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

CHANNEL-1

CHANNEL-2

PARAMETER

SYMBOL

UNIT

TYP.

MAX.

TYP.

MAX.

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (source)

t  10 s

Steady state

R_thJA

R_thJC

°C/W

3.8

4.7

1.7

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 77 °C/W for channel-1 and 68 °C/W for channel-2

S17-1591 Rev. A, 16-Oct-17

Document Number: 75698

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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