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SiZF918BDT PDF预览

SiZF918BDT

更新时间: 2024-04-09 19:03:25
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威世 - VISHAY /
页数 文件大小 规格书
12页 208K
描述
Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode

SiZF918BDT 数据手册

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SiZF918BDT  
Vishay Siliconix  
www.vishay.com  
Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode  
FEATURES  
• TrenchFET® Gen IV power MOSFET  
• SkyFET® low side MOSFET with integrated  
Schottky  
• 100 % Rg and UIS tested  
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
VIN/D1  
APPLICATIONS  
• CPU core power  
N-Channel 1  
MOSFET  
• Computer / server peripherals GHS/G1  
PRODUCT SUMMARY  
• POL  
G1Return/S1  
GLS/G2  
VSW/S1-D2  
CHANNEL-1 CHANNEL-2  
• Synchronous buck converter  
• Telecom DC/DC  
VDS (V)  
30  
0.0033  
0.0053  
9
30  
0.0014  
0.0023  
24  
RDS(on) max. (Ω) at VGS = 10 V  
RDS(on) max. (Ω) at VGS = 4.5 V  
Qg typ. (nC)  
ID (A) a  
Configuration  
Schottky  
Diode  
73  
158  
N-Channel 2  
MOSFET  
Dual  
GND/S2  
ORDERING INFORMATION  
Package  
PowerPAIR® 6 x 5F  
SiZF918BDT-T1-GE3  
Lead (Pb)-free and halogen-free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-source voltage  
Gate-source voltage  
SYMBOL  
CHANNEL-1  
CHANNEL-2  
30  
+16, -12  
158  
UNIT  
VDS  
VGS  
30  
+20, -16  
73  
V
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
59  
127  
Continuous drain current (TJ = 150 °C)  
ID  
25 b, c  
20 b, c  
210  
41 b, c  
33 b, c  
280  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
T
C = 25 °C  
24  
3.1 b, c  
20  
20  
26.6  
17  
3.4 b, c  
2.2 b, c  
54  
3.7 b, c  
26  
34  
60  
38  
4 b, c  
2.6 b, c  
Continuous source-drain diode current  
TA = 25 °C  
L = 0.1 mH  
TC = 25 °C  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
mJ  
W
T
C = 70 °C  
Maximum power dissipation  
PD  
TA = 25 °C  
TA = 70 °C  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d, e  
TJ, Tstg  
-55 to +150  
260  
°C  
THERMAL RESISTANCE RATINGS  
CHANNEL-1  
CHANNEL-2  
PARAMETER  
SYMBOL  
UNIT  
TYP.  
MAX.  
TYP.  
25  
MAX.  
31  
Maximum junction-to-ambient b, f  
Maximum junction-to-case (source)  
t 10 s  
Steady state  
RthJA  
RthJC  
30  
37  
°C/W  
3.8  
4.7  
1.7  
2.1  
Notes  
a. TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 6 x 5F is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 77 °C/W for channel-1 and 68 °C/W for channel-2  
S23-1189-Rev. A, 25-Dec-2023  
Document Number: 62448  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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