Datasheet > SiZF918BDT

SiZF918BDT

更新时间： 2024-04-09 19:03:25

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	208K
描述
Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode

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SiZF918BDT 数据手册

SiZF918BDT

Vishay Siliconix

www.vishay.com

CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

10000

1000

100

10000

1000

100

125

150

100

125

150

T_C- Case Temperature (°C)

Current Derating ^a

Power, Junction-to-Case

Note

a. The power dissipation P_Dis based on T_Jmax. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the

package limit

S23-1189-Rev. A, 25-Dec-2023

Document Number: 62448

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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