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SiZF918BDT PDF预览

SiZF918BDT

更新时间: 2024-04-09 19:03:25
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
12页 208K
描述
Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode

SiZF918BDT 数据手册

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SiZF918BDT  
Vishay Siliconix  
www.vishay.com  
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)  
PARAMETER  
Dynamic a  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
-
-
-
-
-
-
-
-
11  
15  
5
20  
30  
10  
15  
40  
70  
10  
15  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
Channel-1  
VDD = 15 V, RL = 3 Ω  
ID 5 A, VGEN = 10 V, Rg = 1 Ω  
6
ns  
22  
35  
5
Turn-off delay time  
Fall time  
Channel-2  
VDD = 15 V, RL = 3 Ω  
ID 5 A, VGEN = 10 V, Rg = 1 Ω  
7
Drain-Source Body Diode Characteristics  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24  
60  
210  
280  
1.1  
0.6  
45  
90  
20  
110  
-
Continuous source-drain diode current  
IS  
ISM  
VSD  
trr  
TC = 25 °C  
A
-
Pulse diode forward current a  
Body diode voltage  
-
IS = 5 A, VGS = 0 V  
IS = 3 A, VGS = 0 V  
0.8  
0.36  
22  
45  
11  
55  
12  
26  
10  
19  
V
Body diode reverse recovery time  
Body diode reverse recovery charge  
Reverse recovery fall time  
ns  
nC  
Channel-1  
IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C  
Qrr  
ta  
Channel-2  
IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C  
-
ns  
-
Reverse recovery rise time  
tb  
-
Notes  
a. Guaranteed by design, not subject to production testing  
b. Pulse test; pulse width 300 μs, duty cycle 2 %  
c. Based on characterization, not subject to production testing  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
S23-1189-Rev. A, 25-Dec-2023  
Document Number: 62448  
3
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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