SiZF918BDT
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
Dynamic a
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
-
11
15
5
20
30
10
15
40
70
10
15
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
Channel-1
VDD = 15 V, RL = 3 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
6
ns
22
35
5
Turn-off delay time
Fall time
Channel-2
VDD = 15 V, RL = 3 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
7
Drain-Source Body Diode Characteristics
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24
60
210
280
1.1
0.6
45
90
20
110
-
Continuous source-drain diode current
IS
ISM
VSD
trr
TC = 25 °C
A
-
Pulse diode forward current a
Body diode voltage
-
IS = 5 A, VGS = 0 V
IS = 3 A, VGS = 0 V
0.8
0.36
22
45
11
55
12
26
10
19
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
ns
nC
Channel-1
IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C
Qrr
ta
Channel-2
IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C
-
ns
-
Reverse recovery rise time
tb
-
Notes
a. Guaranteed by design, not subject to production testing
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. Based on characterization, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S23-1189-Rev. A, 25-Dec-2023
Document Number: 62448
3
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