Datasheet > SiZF918BDT

SiZF918BDT

更新时间： 2024-04-09 19:03:25

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	208K
描述
Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode

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SiZF918BDT 数据手册

SiZF918BDT

Vishay Siliconix

www.vishay.com

CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

100

10000

1000

100

0.016

0.012

0.008

0.004

10000

1000

T_J= 150 °C

T_J= 25 °C

100

T_J= 125 °C

0.1

0.01

T_J= 25 °C

0.2

0.4

0.6

0.8

1.0

V_SD- Source-to-Drain Voltage (V)

V_GS- Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Axis Title

2.0

1.8

1.6

1.4

1.2

1.0

10000

1000

100

10000

1000

100

I_D= 250 μA

-50 -25

75 100 125 150

0.001 0.01

0.1

100

1000

T_J- Junction Temperature (°C)

t - Time (s)

Threshold Voltage

Single Pulse Power, Junction-to-Case

Axis Title

1000

100

10000

Limited by R_DS(on)

I_DMlimited

I_D(ON)limited

1000

100 μs

1 ms

10 ms

100 ms

1 s

100

TA= 25 °C,

0.1

0.01

single pulse

10 s

BVDSS limited

0.01

0.1

100

V_DS- Drain-to-Source Voltage (V)

Safe Operating Area, Junction-to-Ambient

S23-1189-Rev. A, 25-Dec-2023

Document Number: 62448

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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