Datasheet > SiZF918BDT

SiZF918BDT

更新时间： 2024-04-09 19:03:25

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	208K
描述
Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode

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SiZF918BDT 数据手册

SiZF918BDT

Vishay Siliconix

www.vishay.com

CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

120

100

10000

1000

100

120

100

10000

1000

100

V_GS= 10 V thru 4 V

T_C= 25 °C

V_GS= 3 V

T_C= 125 °C

T_C= -55 °C

0.5

1.0

1.5

2.0

2.5

3.0

120

V_DS- Drain-to-Source Voltage (V)

V_GS- Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

Axis Title

0.005

0.004

0.003

0.002

0.001

10000

1000

100

10 000

1000

100

10000

1000

100

V_GS= 4.5 V

C_iss

C_oss

V_GS= 10 V

C_rss

100

I_D- Drain Current (A)

V_DS- Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

Axis Title

10000

1000

100

1.6

1.4

1.2

1.0

0.8

0.6

10000

1000

100

I_D= 10 A

V_GS= 10 V

I_D= 10 A

V_DS= 15 V

V_DS= 7.5 V

V_DS= 24 V

V_GS= 4.5 V

-50 -25

75 100 125 150

Q_g- Total Gate Charge (nC)

T_J- Junction Temperature (°C)

Gate Charge

On-Resistance vs. Junction Temperature

S23-1189-Rev. A, 25-Dec-2023

Document Number: 62448

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 2 345 6 7...12

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