5秒后页面跳转
SIZ918DT PDF预览

SIZ918DT

更新时间: 2024-11-15 12:22:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
14页 223K
描述
Dual N-Channel 30 V (D-S) MOSFETs

SIZ918DT 数据手册

 浏览型号SIZ918DT的Datasheet PDF文件第2页浏览型号SIZ918DT的Datasheet PDF文件第3页浏览型号SIZ918DT的Datasheet PDF文件第4页浏览型号SIZ918DT的Datasheet PDF文件第5页浏览型号SIZ918DT的Datasheet PDF文件第6页浏览型号SIZ918DT的Datasheet PDF文件第7页 
New Product  
SiZ918DT  
Vishay Siliconix  
Dual N-Channel 30 V (D-S) MOSFETs  
FEATURES  
TrenchFET® Power MOSFETs  
100 % Rg and UIS Tested  
Material categorization:  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) () (Max.)  
ID (A) Qg (Typ.)  
16a  
16a  
0.0120 at VGS = 10 V  
0.0145 at VGS = 4.5 V  
0.0037 at VGS = 10 V  
0.0045 at VGS = 4.5 V  
For definitions of compliance please see  
www.vishay.com/doc?99912  
Channel-1  
Channel-2  
30  
6.8 nC  
28a  
28a  
APPLICATIONS  
30  
32 nC  
Notebook System Power  
POL  
Synchronous Buck Converter  
PowerPAIR® 6 x 5  
D
1
Pin 1  
G
1
5 mm  
1
D
1
2
G
D
1
1
3
D
D
1
1
N-Channel 1  
MOSFET  
4
S /D  
1
2
G
2
S /D  
1
2
Pin 9  
8
S
2
7
6 mm  
6
G
2
5
N-Channel 2  
MOSFET  
Ordering Information: SiZ918DT-T1-GE3 (Lead (Pb)-free and Halogen-free)  
S
2
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Channel-1  
Channel-2  
Unit  
VDS  
30  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
16a  
16a  
14.3b, c  
11.4b, c  
50  
16a  
3.4b, c  
28a  
28a  
26a, b, c  
21a, b, c  
110  
28a  
4.3b, c  
35  
T
C = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
ID  
Continuous Drain Current (TJ = 150 °C)  
A
IDM  
IS  
Pulsed Drain Current (t = 300 µs)  
TC = 25 °C  
TA = 25 °C  
Continuous Source Drain Diode Current  
IAS  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
18  
L = 0.1 mH  
EAS  
16  
61  
mJ  
W
T
T
T
C = 25 °C  
C = 70 °C  
A = 25 °C  
29  
100  
64  
5.2b, c  
3.3b, c  
18  
PD  
Maximum Power Dissipation  
4.2b, c  
2.7b, c  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Channel-1  
Typ. Max.  
Channel-2  
Typ. Max.  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
Unit  
t 10 s  
24  
30  
19  
1
24  
°C/W  
RthJC  
Steady State  
3.4  
4.3  
1.25  
Notes:  
a. Package limited.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not  
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required  
to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 65 °C/W for channel-1 and 55 °C/W for channel-2.  
Document Number: 63783  
S12-0543 Rev. A, 12-Mar-12  
For more information please contact: pmostechsupport@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SIZ918DT相关器件

型号 品牌 获取价格 描述 数据表
SIZ920DT VISHAY

获取价格

Dual N-Channel 30 V (D-S) MOSFETs
SiZ926DT VISHAY

获取价格

Dual N-Channel 25 V (D-S) MOSFETs
SiZ980BDT VISHAY

获取价格

Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
SiZ980DT VISHAY

获取价格

Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
SiZ988DT VISHAY

获取价格

Dual N-Channel 30 V (D-S) MOSFETs
SiZ998BDT VISHAY

获取价格

Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode
SiZ998DT VISHAY

获取价格

Dual N-Channel 30 V (D-S) MOSFETs
SiZF300DT VISHAY

获取价格

Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
SiZF360DT VISHAY

获取价格

Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
SiZF5300DT VISHAY

获取价格

Dual N-Channel 30 V (D-S) MOSFET