Datasheet > SiZF906DDT

SiZF906DDT

更新时间： 2024-10-15 17:15:43

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威世 - VISHAY		/
页数	文件大小	规格书
12页	252K
描述
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

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SiZF906DDT 数据手册

SiZF906DDT

Vishay Siliconix

www.vishay.com

Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

FEATURES

• TrenchFET^®Gen IV power MOSFET

• SkyFET^®low side MOSFET with integrated

Schottky

• 100 % R_gand UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

V_IN/D₁

APPLICATIONS

N-Channel 1

MOSFET

• CPU core power

PRODUCT SUMMARY

G_HS/G₁

• Computer / server peripherals

• POL

CHANNEL-1 CHANNEL-2

G₁Return/S₁

V_SW/S₁-D₂

_DS(V)

0.00210

0.0044

0.00090

0.00130

• Synchronous buck converter

• Telecom DC/DC

_DS(on)max. () at V_GS= 10 V

_DS(on)max. () at V_GS= 4.5 V

Schottky

Diode

G_LS/G₂

Q_gtyp. (nC)

_D(A) ^a

Configuration

105

257

N-Channel 2

MOSFET

Dual

GND/S₂

ORDERING INFORMATION

Package

PowerPAIR 6 x 5F

Lead (Pb)-free and halogen-free

SiZF906DDT-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

CHANNEL-1

CHANNEL-2

+20, -16

257

UNIT

V_DS

V_GS

+20, -16

105

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

206

Continuous drain current (T_J= 150 °C)

I_D

36 ^{b, c}

29 ^{b, c}

150

63 ^{b, c}

50 ^{b, c}

350

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

4.1 ^{b, c}

26.5

4.5 ^{b, c}

2.9 ^{b, c}

141 ^a

8.5 ^{b, c}

5 ^{b, c}

3.2 ^{b, c}

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

CHANNEL-1

CHANNEL-2

PARAMETER

SYMBOL

UNIT

TYP.

MAX.

TYP.

MAX.

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (source)

t  10 s

Steady state

R_thJA

R_thJC

°C/W

2.6

3.3

1.2

1.5

Notes

a. T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 60 °C/W for channel-1 and 60 °C/W for channel-2

S24-0399-Rev. A, 22-Apr-2024

Document Number: 61545

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...12

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