Datasheet > SiZ926DT

SiZ926DT

更新时间： 2024-11-16 14:55:35

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威世 - VISHAY		/
页数	文件大小	规格书
14页	230K
描述
Dual N-Channel 25 V (D-S) MOSFETs

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SiZ926DT 数据手册

SiZ926DT

Vishay Siliconix

www.vishay.com

Dual N-Channel 25 V (D-S) MOSFETs

FEATURES

• TrenchFET^®Gen IV power MOSFETs

PowerPAIR^®6 x 5

G₂

S₂

• 100 % R_gand UIS tested

S₁/D₂

(Pin 9)

• Optimized Q_gs/Q_gsratio improves switching

characteristics

D₁

G₁

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

D₁

Top View

Bottom View

APPLICATIONS

• CPU core power

PRODUCT SUMMARY

CHANNEL-1 CHANNEL-2

• Computer / server peripherals

• POL

V_DS(V)

0.00480

0.00790

5.9

0.00220

0.00335

12.5

N-Channel 1

MOSFET

S /D

_DS(on)max. () at V_GS= 10 V

_DS(on)max. () at V_GS= 4.5 V

• Synchronous buck converter

• Telecom DC/DC

Q_gtyp. (nC)

_D(A) ^{a, g}

Configuration

N-Channel 2

MOSFET

Dual

ORDERING INFORMATION

Package

PowerPAIR 6 x 5

SiZ926DT-T1-GE3

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

CHANNEL-1

CHANNEL-2

+16, -12

60 ^a

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

+16, -12

40 ^a

T_C= 25 °C

_C= 70 °C

T_A= 25 °C

T_A= 70 °C

40 ^a

60 ^a

Continuous drain current (T_J= 150 °C)

I_D

22 ^{b, c}

17.5 ^{b, c}

100

16.8

3.2 ^{b, c}

37 ^{b, c}

30 ^{b, c}

170

33.6

4 ^{b, c}

Pulsed drain current (100 μs pulse width)

Continuous source drain diode current

I_DM

I_S

_C= 25 °C

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

20.2

12.9

3.8 ^{b, c}

2.4 ^{b, c}

25.8

4.8 ^{b, c}

3.1 ^{b, c}

_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

CHANNEL-1

CHANNEL-2

PARAMETER

SYMBOL

UNIT

TYP.

MAX.

TYP.

MAX.

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

t  10 s

Steady state

R_thJA

R_thJC

°C/W

4.7

6.2

2.5

3.1

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 68 °C/W for channel-1 and 57 °C/W for channel-2

g. T_C= 25 °C

S19-0939-Rev. C, 11-Nov-2019

Document Number: 68127

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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