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SiZ998DT

更新时间： 2024-11-16 14:52:43
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威世 - VISHAY /
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Dual N-Channel 30 V (D-S) MOSFETs

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SiZ998DT  
Vishay Siliconix  
www.vishay.com  
Dual N-Channel 30 V (D-S) MOSFETs  
FEATURES  
• TrenchFET® Gen IV power MOSFETs  
• SkyFET® low side MOSFET with integrated  
Schottky  
PowerPAIR® 6 x 5  
G2  
8
S2  
7
S2  
6
S2  
5
S1/D2  
(Pin 9)  
• 100 % Rg and UIS tested  
D1  
1
G1  
2
D1  
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
3
D1  
4
D1  
1
Top View  
Bottom View  
D
1
APPLICATIONS  
• CPU core power  
PRODUCT SUMMARY  
CHANNEL-1  
30  
CHANNEL-2  
30  
G
1
• Computer / server peripherals  
• POL  
VDS (V)  
N-Channel 1  
MOSFET  
RDS(on) max. () at VGS = 10 V  
RDS(on) max. () at VGS = 4.5 V  
Qg typ. (nC)  
0.0067  
0.0100  
5.4  
0.0028  
0.0038  
13.2  
S /D  
1
2
• Synchronous buck converter  
• Telecom DC/DC  
Schottky  
Diode  
G
2
ID (A) a, g  
20  
60  
N-Channel 2  
MOSFET  
Dual plus integrated Schottky  
(SkyFET)  
Configuration  
S
2
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
PowerPAIR 6 x 5  
SiZ998DT-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
CHANNEL-1  
CHANNEL-2  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
VGS  
30  
+20, -16  
V
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
20 a  
20 a  
60 a  
60 a  
32.8 b, c  
26.2 b, c  
130  
27.4  
4 b, c  
20  
20  
32.9  
21.1  
4.8 b, c  
3.1 b, c  
Continuous drain current (TJ = 150 °C)  
ID  
18.8 b, c  
15 c  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
90  
16.8  
3.2 b, c  
15  
11.25  
20.2  
12.9  
3.8 b, c  
2.4 b, c  
T
C = 25 °C  
Continuous source drain diode current  
TA = 25 °C  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
L = 0.1 mH  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Maximum power dissipation  
PD  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d, e  
TJ, Tstg  
-55 to +150  
260  
°C  
THERMAL RESISTANCE RATINGS  
CHANNEL-1  
CHANNEL-2  
PARAMETER  
SYMBOL  
UNIT  
TYP.  
26  
MAX.  
33  
TYP.  
21  
MAX.  
26  
Maximum junction-to-ambient b, f  
Maximum junction-to-case (drain)  
t 10 s  
Steady state  
RthJA  
RthJC  
°C/W  
4.7  
6.2  
3
3.8  
Notes  
a. Package limited  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not  
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 68 °C/W for channel-1 and 61 °C/W for channel-2  
g. TC = 25 °C  
S16-0001-Rev. B, 11-Jan-16  
Document Number: 62979  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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