Datasheet > SiZF300DT

SiZF300DT

更新时间： 2024-11-16 14:53:43

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Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

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SiZF300DT 数据手册

SiZF300DT

Vishay Siliconix

www.vishay.com

Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

FEATURES

PowerPAIR^®3 x 3F

• TrenchFET^®Gen IV power MOSFET

• SkyFET^®low side MOSFET with integrated Schottky

• 100 % R_gand UIS tested

D₁

S₂

• Internally connected half-bridge configuration in

3.3 mm-by-3.3 mm footprint

G₁

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

S₁/D₂

G₂

S₁/D₂

V_IN/D₁

APPLICATIONS

N-Channel 1

MOSFET

Top View

Bottom View

• CPU core power

PRODUCT SUMMARY

G_HS/G₁

• Computer / server peripherals

CHANNEL-1 CHANNEL-2

G₁Return/S₁

G_LS/G₂

V_SW/S₁-D₂

• POL

V_DS(V)

0.00450

0.00700

6.9

_DS(on)max. () at V_GS= 10 V

_DS(on)max. () at V_GS= 4.5 V

0.00184

0.00257

19.4

• Synchronous buck converter

• Telecom DC/DC

Schottky

Diode

Q_gtyp. (nC)

_D(A) ^a

Configuration

141

N-Channel 2

MOSFET

GND/S₂

Dual

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAIR 3 x 3F

SiZF300DT-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

CHANNEL-1

CHANNEL-2

+16, -12

141

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

+20, -16

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

113

Continuous drain current (T_J= 150 °C)

I_D

23 ^{b, c}

18 ^{b, c}

150

34 ^{b, c}

27 ^{b, c}

200

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

3.4 ^{b, c}

105

6.2 ^{b, c}

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

9.8

3.8 ^{b, c}

2.4 ^{b, c}

12.8

4.3 ^{b, c}

2.8 ^{b, c}

L = 0.1 mH

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

CHANNEL-1

CHANNEL-2

PARAMETER

SYMBOL

UNIT

TYP.

MAX.

TYP.

MAX.

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (source)

t  10 s

Steady state

R_thJA

R_thJC

2.6

°C/W

1.3

1.7

Notes

a. T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3F is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 66 °C/W for channel-1 and 67 °C/W for channel-2

S18-0479-Rev. A, 30-Apr-2018

Document Number: 76288

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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与SiZF300DT相关器件

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