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SiZF300DT

更新时间： 2024-10-01 14:53:43
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威世 - VISHAY /
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Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

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SiZF300DT 数据手册

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SiZF300DT  
Vishay Siliconix  
www.vishay.com  
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode  
FEATURES  
PowerPAIR® 3 x 3F  
• TrenchFET® Gen IV power MOSFET  
• SkyFET® low side MOSFET with integrated Schottky  
• 100 % Rg and UIS tested  
D1  
S2  
• Internally connected half-bridge configuration in  
3.3 mm-by-3.3 mm footprint  
1
G1  
2
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
S1/D2  
4
G2  
1
S1/D2  
VIN/D1  
APPLICATIONS  
N-Channel 1  
MOSFET  
Top View  
Bottom View  
• CPU core power  
PRODUCT SUMMARY  
GHS/G1  
• Computer / server peripherals  
CHANNEL-1 CHANNEL-2  
G1Return/S1  
GLS/G2  
VSW/S1-D2  
• POL  
VDS (V)  
30  
0.00450  
0.00700  
6.9  
30  
R
DS(on) max. () at VGS = 10 V  
DS(on) max. () at VGS = 4.5 V  
0.00184  
0.00257  
19.4  
• Synchronous buck converter  
• Telecom DC/DC  
R
Schottky  
Diode  
Qg typ. (nC)  
D (A) a  
Configuration  
I
75  
141  
N-Channel 2  
MOSFET  
GND/S2  
Dual  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
PowerPAIR 3 x 3F  
SiZF300DT-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
CHANNEL-1  
CHANNEL-2  
30  
+16, -12  
141  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
VGS  
30  
+20, -16  
75  
V
T
C = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
60  
113  
Continuous drain current (TJ = 150 °C)  
ID  
23 b, c  
18 b, c  
150  
34 b, c  
27 b, c  
200  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
44  
3.4 b, c  
105  
6.2 b, c  
Continuous source-drain diode current  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
14  
9.8  
48  
31  
3.8 b, c  
2.4 b, c  
16  
12.8  
74  
47  
4.3 b, c  
2.8 b, c  
L = 0.1 mH  
mJ  
W
T
C = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Maximum power dissipation  
PD  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d, e  
TJ, Tstg  
-55 to +150  
260  
°C  
THERMAL RESISTANCE RATINGS  
CHANNEL-1  
CHANNEL-2  
PARAMETER  
SYMBOL  
UNIT  
TYP.  
MAX.  
TYP.  
MAX.  
29  
Maximum junction-to-ambient b, f  
Maximum junction-to-case (source)  
t 10 s  
Steady state  
RthJA  
RthJC  
26  
2
33  
2.6  
23  
°C/W  
1.3  
1.7  
Notes  
a. TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3F is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 66 °C/W for channel-1 and 67 °C/W for channel-2  
S18-0479-Rev. A, 30-Apr-2018  
Document Number: 76288  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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