Datasheet > SiZF360DT

SiZF360DT

更新时间： 2024-11-16 14:55:03

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威世 - VISHAY		/
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Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

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SiZF360DT 数据手册

SiZF360DT

Vishay Siliconix

www.vishay.com

Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

FEATURES

• TrenchFET^®Gen IV power MOSFET

• SkyFET^®low side MOSFET with integrated Schottky

• 100 % R_gand UIS tested

• Double cooled feature provides additional

avenue for thermal transfer

• Internally connected half-bridge configuration in

3.3 mm-by-3.3 mm footprint

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

V_IN/D₁

APPLICATIONS

N-Channel 1

MOSFET

PRODUCT SUMMARY

• CPU core power

CHANNEL-1 CHANNEL-2

G_HS/G₁

• Computer / server peripherals

• POL

V_DS(V)

0.00450

0.00750

6.9

G₁Return/S₁

V_SW/S₁-D₂

_DS(on)max. () at V_GS= 10 V

_DS(on)max. () at V_GS= 4.5 V

0.00190

0.00260

19.4

• Synchronous buck converter

• Telecom DC/DC

Q_gtyp. (nC)

_D(A) ^a

Configuration

Schottky

Diode

G_LS/G₂

143

Dual

N-Channel 2

MOSFET

GND/S₂

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAIR 3 x 3FDC

SiZF360DT-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

CHANNEL-1

CHANNEL-2

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

+20, -16

+16, -12

143

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

114

Continuous drain current (T_J= 150 °C)

I_D

23 ^{b, c}

18 ^{b, c}

150

34 ^{b, c}

27 ^{b, c}

200

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

3.4 ^{b, c}

9.8

3.8 ^{b, c}

2.4 ^{b, c}

111

6.2 ^{b, c}

12.8

4.3 ^{b, c}

2.8 ^{b, c}

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

L = 0.1 mH

T_C= 25 °C

_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

CHANNEL-1

CHANNEL-2

PARAMETER

SYMBOL

UNIT

TYP.

MAX.

TYP.

MAX.

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

Maximum junction-to-case (source)

t  10 s

Steady state

R_thJA

R_thJC

1.8

2.6

2.4

3.4

0.76

1.2

°C/W

1.6

Notes

a. T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3FDC is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 66 °C/W for channel-1 and 67 °C/W for channel-2

S19-0801-Rev. A, 23-Sep-2019

Document Number: 77233

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SiZF360DT相关器件

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