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SiZ980BDT

更新时间： 2024-11-16 14:55:03
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威世 - VISHAY /
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Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

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SiZ980BDT 数据手册

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SiZ980BDT  
Vishay Siliconix  
www.vishay.com  
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode  
FEATURES  
• TrenchFET® Gen IV power MOSFET  
• SkyFET® low side MOSFET with integrated Schottky  
PowerPAIR® 6 x 5  
G2  
8
S2  
7
S2  
6
S2  
5
S1/D2  
(Pin 9)  
• Very low RDS x Qg FOM improves efficiency  
• 100 % Rg and UIS tested  
D1  
1
2
D1  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
G1  
3
D1  
4
D1  
1
Top View  
D1  
Bottom View  
APPLICATIONS  
• CPU core power  
PRODUCT SUMMARY  
• Computer / server peripherals  
CHANNEL-1 CHANNEL-2  
G1  
V
DS (V)  
30  
0.00439  
0.00712  
5.7  
30  
• POL  
N-Channel 1  
MOSFET  
S1/D2  
R
DS(on) max. (Ω) at VGS = 10 V  
DS(on) max. (Ω) at VGS = 4.5 V  
0.00106  
0.00172  
24.2  
• Synchronous buck converter  
• Telecom DC/DC  
R
Schottky  
Diode  
Qg typ. (nC)  
D (A) a  
G2  
I
54.8  
197  
Dual plus integrated Schottky  
(SkyFET)  
N-Channel 2  
MOSFET  
Configuration  
S2  
ORDERING INFORMATION  
Package  
PowerPAIR 6 x 5  
Lead (Pb)-free and halogen-free  
SiZ980BDT-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
CHANNEL-1  
CHANNEL-2  
30  
+20, -16  
197  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
VGS  
30  
+20, -16  
54.8  
V
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
43.8  
158  
Continuous drain current (TJ = 150 °C)  
ID  
23.7 b, c  
19 b, c  
90  
54.3b, c  
43.4 b, c  
130  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
T
C = 25 °C  
16.7  
3.2 b, c  
15  
11.2  
20  
12.9  
3.8 b, c  
2.4 b, c  
85.4  
4.1 b, c  
25  
31  
66  
Continuous source-drain diode current  
TA = 25 °C  
L = 0.1 mH  
TC = 25 °C  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
mJ  
W
T
C = 70 °C  
42  
Maximum power dissipation  
PD  
TA = 25 °C  
TA = 70 °C  
5 b, c  
3.2 b, c  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c, d  
TJ, Tstg  
-55 to +150  
260  
°C  
THERMAL RESISTANCE RATINGS  
CHANNEL-1  
CHANNEL-2  
PARAMETER  
SYMBOL  
UNIT  
TYP.  
MAX.  
TYP.  
MAX.  
Maximum junction-to-ambient b, f  
Maximum junction-to-case (drain)  
t ≤ 10 s  
Steady state  
RthJA  
RthJC  
26  
4.7  
33  
6.2  
20  
1.5  
25  
1.9  
°C/W  
Notes  
a. TC = 25°C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not  
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 68 °C/W for channel-1 and 57 °C/W for channel-2  
S20-0029-Rev. A, 27-Jan-2020  
Document Number: 77251  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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