Datasheet > SiZ998BDT

SiZ998BDT

更新时间： 2024-11-16 14:53:31

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威世 - VISHAY		/
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Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode

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SiZ998BDT 数据手册

SiZ998BDT

Vishay Siliconix

www.vishay.com

Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode

FEATURES

PowerPAIR^®6 x 5

G₂

• TrenchFET^®Gen IV power MOSFET

S₂

• SkyFET^®low side MOSFET with integrated

Schottky

S₂

S₁/D₂

(Pin 9)

• Very low R_DSx Q_gFOM improves efficiency

D₁

G₁

• 100 % R_gand UIS tested

D₁

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

D₁

Top View

Bottom View

D₁

APPLICATIONS

PRODUCT SUMMARY

• CPU core power

CHANNEL-1 CHANNEL-2

• Computer / server peripherals

G₁

V_DS(V)

0.00439

0.00712

5.7

• POL

N-Channel 1

MOSFET

S₁/D₂

_DS(on)max. (Ω) at V_GS= 10 V

_DS(on)max. (Ω) at V_GS= 4.5 V

0.0024

0.0038

14.6

• Synchronous buck converter

• Telecom DC/DC

Q_gtyp. (nC)

_D(A) ^a

Schottky

Diode

G₂

54.8

94.6

Dual plus integrated Schottky

(SkyFET)

N-Channel 2

MOSFET

Configuration

S₂

ORDERING INFORMATION

Package

PowerPAIR 6 x 5

Lead (Pb)-free and halogen-free

SiZ998BDT-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

CHANNEL-1

CHANNEL-2

+20, -16

94.6

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

+20, -16

54.8

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

43.8

75.7

Continuous drain current (T_J= 150 °C)

I_D

23.7 ^{b, c}

19 ^{b, c}

36.2 ^{b, c}

28.9 ^{b, c}

130

Pulsed drain current (t = 100 μs)

I_DM

I_S

_C= 25 °C

16.7

3.2 ^{b, c}

11.2

12.9

3.8 ^{b, c}

2.4 ^{b, c}

27.4

4 ^{b, c}

32.9

21.1

4.8 ^{b, c}

3.1 ^{b, c}

Continuous source-drain diode current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{c, d}

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

CHANNEL-1

CHANNEL-2

PARAMETER

SYMBOL

UNIT

TYP.

MAX.

TYP.

MAX.

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

t ≤ 10 s

Steady state

R_thJA

R_thJC

°C/W

4.7

6.2

3.8

Notes

a. T_C= 25°C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 68 °C/W for channel-1 and 57 °C/W for channel-2

S20-0061-Rev. A, 10-Feb-2020

Document Number: 77875

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SiZ998BDT相关器件

型号	品牌	获取价格	描述	数据表
SiZ998DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SiZF300DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
SiZF360DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
SiZF5300DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET
SiZF5302DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET
SiZF640DT	VISHAY	获取价格	Symmetric Dual N-Channel 40 V (D-S) MOSFET
SiZF906ADT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
SIZF906ADT-T1-GE3	VISHAY	获取价格	MOSFET DUAL N-CHAN 30V
SiZF906BDT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
SiZF906DDT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

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