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SiZ988DT PDF预览

SiZ988DT

更新时间: 2024-11-16 14:53:43
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威世 - VISHAY /
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描述
Dual N-Channel 30 V (D-S) MOSFETs

SiZ988DT 数据手册

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SiZ988DT  
Vishay Siliconix  
www.vishay.com  
Dual N-Channel 30 V (D-S) MOSFETs  
FEATURES  
• TrenchFET® Gen IV power MOSFETs  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) () (MAX.)  
ID (A) Qg (TYP.)  
• 100 % Rg and UIS tested  
0.0075 at VGS = 10 V  
0.0120 at VGS = 4.5 V  
0.0041 at VGS = 10 V  
0.0052 at VGS = 4.5 V  
40 g  
Channel-1  
Channel-2  
30  
6.9 nC  
32 g  
• Optimized Qgs/Qgs ratio improves switching  
characteristics  
60  
30  
15.4 nC  
60  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
PowerPAIR® 6 x 5  
G2  
8
S2  
7
S2  
6
D
S2  
APPLICATIONS  
1
5
S1/D2  
(Pin 9)  
• CPU core power  
• Computer / server peripherals  
G
1
D1  
1
G1  
• POL  
N-Channel 1  
MOSFET  
2
D1  
S /D  
1
2
3
D1  
• Synchronous buck converter  
• Telecom DC/DC  
4
D1  
1
Top View  
Bottom View  
G
2
Ordering Information:  
SiZ988DT-T1-GE3 (lead (Pb)-free and halogen-free)  
N-Channel 2  
MOSFET  
S
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
CHANNEL-1  
CHANNEL-2  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
30  
V
VGS  
+20, -16  
T
C = 25 °C  
40 g  
32 g  
17.5 b, c  
14 b, c  
70  
60 a  
60 a  
27 b, c  
21.7 b, c  
140  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
Pulsed Drain Current (t = 100 μs)  
IDM  
IS  
T
C = 25 °C  
16.8  
3.2 b, c  
33.6  
4 b, c  
20  
Continuous Source Drain Diode Current  
TA = 25 °C  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
IAS  
10  
L = 0.1 mH  
EAS  
5
20  
mJ  
W
T
C = 25 °C  
20.2  
40  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
12.9  
3.8 b, c  
2.4 b, c  
25.8  
4.8 b, c  
3.1 b, c  
Maximum Power Dissipation  
PD  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature) d, e  
TJ, Tstg  
-55 to +150  
260  
°C  
THERMAL RESISTANCE RATINGS  
CHANNEL-1  
CHANNEL-2  
PARAMETER  
SYMBOL  
UNIT  
TYP.  
26  
MAX.  
33  
TYP.  
21  
MAX.  
26  
Maximum Junction-to-Ambient b, f  
Maximum Junction-to-Case (Drain)  
t 10 s  
RthJA  
RthJC  
°C/W  
Steady State  
4.7  
6.2  
2.5  
3.1  
Notes  
a. Package limited  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not  
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 68 °C/W for channel-1 and 57 °C/W for channel-2.  
g. TC = 25 °C.  
S15-2567-Rev. A, 02-Nov-15  
Document Number: 66937  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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