Datasheet > SIZ900DT

SIZ900DT

更新时间： 2024-11-15 09:25:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
14页	246K
描述
Dual N-Channel 30 V (D-S) MOSFETs

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中文翻译

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SIZ900DT 数据手册

New Product

SiZ900DT

Vishay Siliconix

Dual N-Channel 30 V (D-S) MOSFETs

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)()

I_D(A) Q_g(Typ.)

•

TrenchFET^®Power MOSFETs

100 % R_gand UIS Tested

24^a

0.0072 at V_GS= 10 V

0.0092 at V_GS= 4.5 V

0.0039 at V_GS= 10 V

0.0047 at V_GS= 4.5 V

Channel-1

Channel-2

13.5 nC

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

28^a

34 nC

•

Notebook System Power

POL

Synchronous Buck Converter

PowerPAIR^®6 x 5

PIN1

5 mm

N-Channel 1

MOSFET

S /D

6 mm

N-Channel 2

MOSFET

Ordering Information: SiZ900DT-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Channel-1

Channel-2

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

24^a

19^{b, c}

15.5^{b, c}

24^a

3.8^{b, c}

28^a

28^{b, c}

22^{b, c}

110

28^a

4.3^{b, c}

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

I_D

Continuous Drain Current (T_J= 150 °C)

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

Continuous Source Drain Diode Current

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

_C= 25 °C

_C= 70 °C

_A= 25 °C

100

5.2^{b, c}

3.3^{b, c}

P_D

Maximum Power Dissipation

4.6^{b, c}

3^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Channel-1

Typ. Max.

Channel-2

Typ. Max.

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Unit

t  10 s

°C/W

R_thJC

Steady State

2.1

2.6

1.25

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required

to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2.

Document Number: 67344

S11-1652-Rev. B, 15-Aug-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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中文翻译

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与SIZ900DT相关器件

型号	品牌	获取价格	描述	数据表
SIZ900DT-T1-GE3	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SIZ902DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SIZ904DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SIZ910DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SIZ916DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SIZ916DT-T1-GE3	VISHAY	获取价格	MOSFET 2N-CH 30V 16A POWERPAIR
SIZ918DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SIZ920DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SiZ926DT	VISHAY	获取价格	Dual N-Channel 25 V (D-S) MOSFETs
SiZ980BDT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

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