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SIZ916DT

更新时间: 2024-11-15 12:22:35
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威世 - VISHAY /
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描述
Dual N-Channel 30 V (D-S) MOSFETs

SIZ916DT 数据手册

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New Product  
SiZ916DT  
Vishay Siliconix  
Dual N-Channel 30 V (D-S) MOSFETs  
FEATURES  
TrenchFET® Gen IV Power MOSFETs  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) () (Max.)  
0.0064 at VGS = 10 V  
0.0100 at VGS = 4.5 V  
0.0013 at VGS = 10 V  
0.00175 at VGS = 4.5 V  
Qg (Typ.)  
I
D (A)g  
100 % Rg and UIS Tested  
Material categorization:  
16a  
16a  
40a  
40a  
Channel-1  
Channel-2  
30  
7.2 nC  
For definitions of compliance please see  
www.vishay.com/doc?99912  
30  
45 nC  
APPLICATIONS  
D
1
CPU Core Power  
PowerPAIR® 6 x 5  
Computer/Server Peripherals  
Synchronous Buck Converter  
POL  
G
1
Pin 1  
G
1
5 mm  
N-Channel 1  
MOSFET  
1
D
1
Telecom DC/DC  
2
D
1
S /D  
1
2
3
D
D
1
1
4
G
2
S /D  
1
2
G
2
Pin 9  
8
S
2
7
N-Channel 2  
MOSFET  
6 mm  
6
S
2
5
Ordering Information:  
SiZ916DT-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Channel-1  
Channel-2  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
30  
20, - 16  
V
VGS  
TC = 25 °C  
C = 70 °C  
16a  
16a  
16a, b, c  
15.5b, c  
80  
40a  
40a  
40a, b, c  
38.8b, c  
100  
T
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
Pulsed Drain Current (t = 300 µs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
19  
28  
Continuous Source Drain Diode Current  
3.25b, c  
10  
4.3b, c  
15  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
IAS  
L = 0.1 mH  
EAS  
5
11.25  
100  
mJ  
W
TC = 25 °C  
22.7  
14.5  
3.9b, c  
2.5b, c  
T
C = 70 °C  
A = 25 °C  
64  
Maximum Power Dissipation  
PD  
T
5.2b, c  
3.3b, c  
TA = 70 °C  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
TJ, Tstg  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Channel-1  
Typ. Max.  
25 32  
4.4 5.5  
Channel-2  
Typ. Max.  
19 24  
1.25  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
Unit  
t 10 s  
Steady State  
°C/W  
RthJC  
1
Notes:  
a. Package limited  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not  
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required  
to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2.  
g. TC = 25 °C.  
Document Number: 62721  
www.vishay.com  
1
For technical questions, contact: pmostechsupport@vishay.com  
This document is subject to change without notice.  
S12-2049-Rev. A, 27-Aug-12  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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