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SIZ916DT-T1-GE3

更新时间： 2024-09-30 22:59:11
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威世 - VISHAY /
页数 文件大小 规格书
14页 227K
描述
MOSFET 2N-CH 30V 16A POWERPAIR

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SIZ916DT-T1-GE3 数据手册

 浏览型号SIZ916DT-T1-GE3的Datasheet PDF文件第2页浏览型号SIZ916DT-T1-GE3的Datasheet PDF文件第3页浏览型号SIZ916DT-T1-GE3的Datasheet PDF文件第4页浏览型号SIZ916DT-T1-GE3的Datasheet PDF文件第5页浏览型号SIZ916DT-T1-GE3的Datasheet PDF文件第6页浏览型号SIZ916DT-T1-GE3的Datasheet PDF文件第7页 
SiZ916DT  
Vishay Siliconix  
www.vishay.com  
Dual N-Channel 30 V (D-S) MOSFETs  
FEATURES  
• TrenchFET® Gen IV power MOSFETs  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) () (MAX.)  
ID (A) g Qg (TYP.)  
• 100 % Rg and UIS tested  
0.00640 at VGS = 10 V  
0.01000 at VGS = 4.5 V  
0.00130 at VGS = 10 V  
0.00175 at VGS = 4.5 V  
16 a  
16 a  
Channel-1  
Channel-2  
30  
7.2 nC  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
40 a  
30  
45 nC  
40 a  
PowerPAIR® 6 x 5  
D
1
APPLICATIONS  
G2  
8
S2  
7
• CPU core power  
S2  
6
S2  
• Computer/server peripherals  
5
S1/D2  
(Pin 9)  
G
1
• Synchronous buck converter  
• POL  
N-Channel 1  
MOSFET  
D1  
1
G1  
S /D  
1
2
2
D1  
3
D1  
• Telecom DC/DC  
4
D1  
1
G
2
Top View  
Bottom View  
N-Channel 2  
MOSFET  
Ordering Information:  
SiZ916DT-T1-GE3 (lead (Pb)-free and halogen-free)  
S
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
CHANNEL-1  
CHANNEL-2  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
30  
V
VGS  
+20, -16  
T
T
C = 25 °C  
C = 70 °C  
16 a  
16 a  
16 a, b, c  
15.5 b, c  
80  
40 a  
40 a  
40 a, b, c  
38.8 b, c  
100  
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
Pulsed Drain Current (t = 300 μs)  
IDM  
IS  
T
C = 25 °C  
19  
3.25 b, c  
28  
4.3 b, c  
Continuous Source Drain Diode Current  
TA = 25 °C  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
IAS  
10  
15  
L = 0.1 mH  
EAS  
5
11.25  
100  
mJ  
W
T
T
C = 25 °C  
C = 70 °C  
22.7  
14.5  
64  
Maximum Power Dissipation  
PD  
TA = 25 °C  
TA = 70 °C  
3.9 b, c  
2.5 b, c  
5.2 b, c  
3.3 b, c  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature) d, e  
TJ, Tstg  
-55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
CHANNEL-1  
CHANNEL-2  
PARAMETER  
SYMBOL  
UNIT  
TYP.  
25  
MAX.  
32  
TYP.  
19  
MAX.  
24  
Maximum Junction-to-Ambient b, f  
Maximum Junction-to-Case (Drain)  
t 10 s  
RthJA  
RthJC  
°C/W  
Steady State  
4.4  
5.5  
1
1.25  
Notes  
a. Package limited.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not  
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2.  
g. TC = 25 °C.  
S15-1672-Rev. B, 20-Jul-15  
Document Number: 62721  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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